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A high-mobility layered bismuth selenium oxide semiconductor thin film and its preparation method

A semiconductor and layered technology, applied in semiconductor devices, coatings, gaseous chemical plating, etc., can solve problems such as poor crystal quality, single crystal thin film synthesis has not been reported, and it is difficult to meet the needs of electronics and optoelectronics.

Active Publication Date: 2018-06-01
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, so far, Bi 2 o 2 Se materials are mainly obtained by solution method or high-temperature gas-gas transport method, and the obtained products are nanocrystals or bulks, and their crystal quality is poor, which is difficult to meet the needs of the electronics and optoelectronics fields.
Large area continuous high quality Bi 2 o 2 The synthesis of Se single crystal thin films has not been reported yet

Method used

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  • A high-mobility layered bismuth selenium oxide semiconductor thin film and its preparation method
  • A high-mobility layered bismuth selenium oxide semiconductor thin film and its preparation method
  • A high-mobility layered bismuth selenium oxide semiconductor thin film and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Weigh 0.71 g Bi 2 o 3 Powder and 1.00 g Bi 2 Se 3 block (molar ratio 1:1), which was placed in the center of the quartz tube of the tube furnace. Next, the fluorophlogopite substrate was placed 10-14 cm downstream from the center of the tube furnace. The carrier gas argon was introduced to maintain the system pressure at 200 Torr. Raise the temperature to 630°C and maintain it for 5 minutes for chemical vapor deposition. After the deposition is completed, the introduction of the carrier gas is stopped, and the temperature is naturally cooled to room temperature, and the deposited Bi 2 o 2 The mica substrate of Se thin film is taken out, promptly obtains the layered Bi provided by the present invention 2 o 2 Se semiconductor film.

[0033] figure 2 The resulting layered Bi prepared for this example 2 o 2 Crystal structure diagram of Se semiconductor thin film; it can be seen from the figure that Bi 2 o 2 Se is a type composed of (Bi 2 o 2 ) n layer and ...

Embodiment 2

[0040] Weigh 1.42 g Bi 2 o 3 Powder and 1.00 g Bi 2 Se 3 block (molar ratio 2:1), which was placed in the center of the quartz tube of the tube furnace. Subsequently, the fluorophlogopite substrate was placed 10-14 cm downstream from the center of the tube furnace. The carrier gas argon was introduced to maintain the system pressure at 400 Torr. Raise the temperature to 580°C and maintain it for 30 minutes for chemical vapor deposition. After the deposition is completed, the introduction of the carrier gas is stopped, and the temperature is naturally cooled to room temperature, and the deposited Bi 2 o 2 The mica substrate of Se thin film is taken out, obtains the layered Bi that the present invention provides 2 o 2 Se semiconductor film.

[0041] Figure 8 It is Bi obtained in Example 2 of the present invention 2 o 2 Optical microscope photo of the Se thin film; it can be seen from the figure that the obtained Bi 2 o 2 The domain size of the Se two-dimensional c...

Embodiment 3

[0043] Weigh 2.13 g Bi 2 o 3 Powder and 1.00 g Bi 2 Se 3 block (molar ratio 3:1), which was placed in the center of the quartz tube of the tube furnace. Subsequently, the fluorophlogopite substrate was placed 10-14 cm downstream from the center of the tube furnace. The carrier gas argon was introduced to maintain the system pressure at 50 Torr. Raise the temperature to 680°C and maintain it for 60 minutes for chemical vapor deposition. After the deposition is completed, the introduction of the carrier gas is stopped, and the temperature is naturally cooled to room temperature, and the deposited Bi 2 o 2 The mica substrate of Se thin film is taken out, obtains the layered Bi that the present invention provides 2 o 2 Se semiconductor film.

[0044] Figure 9 Is the obtained Bi of this embodiment 2 o 2 Optical microscope photo of the Se thin film; it can be seen from the figure that the obtained Bi 2 o 2 The Se film is continuous and uniform over a large area.

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Abstract

The invention discloses a high-mobility-ratio lamellar Bi2O2Se semiconductor film and a preparation method thereof. The method for preparing the high-mobility-ratio lamellar Bi2O2Se semiconductor film includes the steps that Bi2O3 powder and Bi2Se3 blocks serve as raw materials; chemical vapor deposition is carried out on a mica substrate; and after chemical vapor deposition, the lamellar Bi2O2Se semiconductor film is obtained. The method is economical, simple and feasible. The obtained film is large in area, continuous and high in mobility ratio and has broad application prospects.

Description

technical field [0001] The invention belongs to the field of semiconductor materials, and in particular relates to a preparation method of a layered bismuth selenium oxide semiconductor film with high mobility. Background technique [0002] Two-dimensional layered materials have attracted extensive attention due to their unique two-dimensional structure and excellent optical, electrical and optoelectronic properties. Bismuth Selenium Oxide (Bi 2 o 2 Se) is a traditional thermoelectric material belonging to the tetragonal crystal system Z=2), by (Bi 2 o 2 ) n layer and Se n Alternately connected to form a two-dimensional layered crystal structure. C.Drasar et al. on Bi 2 o 2 The electrical transport study of Se single crystal bulk shows that it has a high mobility, and the Hall mobility at room temperature can be higher than 300cm 2 V -1 the s -1 . At the same time, related theoretical calculations show that Bi 2 o 2 Se has a large bulk bandgap (~0.7-1.2eV)....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/30C23C16/448H01L31/032H01L31/09H01L29/24H01L29/78
CPCC23C16/30C23C16/448H01L29/24H01L29/78H01L31/032H01L31/09
Inventor 彭海琳吴金雄谭聪伟
Owner PEKING UNIV
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