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Gan biosensor with integrated solid-state thin-film PT reference electrode and method of making

A technology of biosensor and reference electrode, which is applied in the direction of instruments, scientific instruments, and material analysis through electromagnetic means. It can solve the problems of difficult portability and miniaturization, complicated installation and use, etc., and achieves easy miniaturization and low production cost. , the effect of high integration

Active Publication Date: 2019-01-08
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] The purpose of the present invention is to overcome the above-mentioned deficiencies, to provide a GaN biosensor with an integrated solid-state thin-film reference electrode and a manufacturing method, which overcomes the complicated installation and use of the external reference electrode currently used in GaN biosensors, and it is difficult to realize portability and miniaturization application disadvantages

Method used

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  • Gan biosensor with integrated solid-state thin-film PT reference electrode and method of making
  • Gan biosensor with integrated solid-state thin-film PT reference electrode and method of making
  • Gan biosensor with integrated solid-state thin-film PT reference electrode and method of making

Examples

Experimental program
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Effect test

Embodiment 1

[0051] Step 1: On a clean substrate containing a GaN buffer layer, an AlGaN barrier layer and a substrate, develop a mesa isolation region by photolithography, and form device isolation by means of etching or ion implantation;

[0052] Step 2: Photolithographically develop the ohmic contact area on the unisolated area, and obtain the ohmic metal layer by electron beam evaporation. The ohmic metal layer adopts a Ti / Al / Ni / Au four-layer structure and is formed by rapid annealing at 830 degrees alloy, to obtain ohmic contact;

[0053] Step 3: On the ohmic metal layer and on the substrate, the interconnection area of ​​the source and drain electrodes of the device and the lead area of ​​the reference electrode are photolithographically developed, and the Ni / Au interconnection metal is evaporated by electron beam evaporation technology, and the lift-off Process stripping to obtain the interconnect metal of the source and drain electrodes of the GaN device and the lead metal of the r...

Embodiment 2

[0059] Step 1: On a clean substrate containing a GaN buffer layer, an InAlN barrier layer and a substrate, develop a mesa isolation region by photolithography, and form device isolation by means of etching or ion implantation;

[0060] Step 2: Photolithographically develop the ohmic contact area on the unisolated area, and obtain the ohmic metal layer by electron beam evaporation. The ohmic metal layer adopts a Ti / Al / Ni / Au four-layer structure and is formed by rapid annealing at 830 degrees alloy, to obtain ohmic contact;

[0061] Step 3: On the ohmic metal layer and on the substrate, the interconnection area of ​​the source and drain electrodes of the device and the lead area of ​​the reference electrode are photolithographically developed, and the Ni / Au interconnection metal is evaporated by electron beam evaporation technology, and the lift-off Process stripping to obtain the interconnect metal of the source and drain electrodes of the GaN device and the lead metal of the r...

Embodiment 3

[0067] Step 1: On a clean substrate containing a GaN buffer layer, an AlN barrier layer and a substrate, develop a mesa isolation region by photolithography, and form device isolation by means of etching or ion implantation;

[0068] Step 2: Photolithographically develop the ohmic contact area on the unisolated area, and obtain the ohmic metal layer by electron beam evaporation. The ohmic metal layer adopts a Ti / Al / Ni / Au four-layer structure and is formed by rapid annealing at 830 degrees alloy, to obtain ohmic contact;

[0069] Step 3: On the ohmic metal layer and on the substrate, the interconnection area of ​​the source and drain electrodes of the device and the lead area of ​​the reference electrode are photolithographically developed, and the Ni / Au interconnection metal is evaporated by electron beam evaporation technology, and the lift-off Process stripping to obtain the interconnect metal of the source and drain electrodes of the GaN device and the lead metal of the ref...

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Abstract

The invention discloses a GaN biosensor provided with an integrated type solid film Pt reference electrode and a manufacturing method. Compared with a current external Pt reference electrode of the GaN biosensor, the integrated type solid film Pt reference electrode based on the GaN biosensor has a fixed electrode position, is manufactured with a microelectronic process and has higher degree of precision; besides, the integrated type solid film Pt reference electrode is manufactured with a GaN device simultaneously, so that the manufacturing cost is low, the integration level is high, and a small and portable GaN biosensor is easy to realize.

Description

technical field [0001] The invention belongs to the field of semiconductor biosensors, in particular to a GaN biosensor with an integrated solid-state thin-film Pt reference electrode and a manufacturing method. Background technique [0002] As a third-generation semiconductor material that replaces silicon, GaN has the characteristics of chemical corrosion resistance, high temperature and high power, high electron mobility, etc., and is compatible with GaN-based light-emitting diodes, deep ultraviolet detectors, wireless sensor chips, etc. It is very suitable for High reliability sensor applications. [0003] The conventional structure of GaN HEMT devices, on the heterojunction made of AlGaN / GaN epitaxial material, due to piezoelectric polarization and spontaneous polarization effects, will be at the junction of the barrier layer buffer layer, closer to the buffer layer, A layer of negatively charged two-dimensional electron gas is formed. Due to the relationship of energy...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/414
CPCG01N27/4145
Inventor 张鹏张晨阳谢涌马晓华施建章郝跃
Owner XIDIAN UNIV
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