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All-semiconductor mid-infrared tunable absorber

A semiconductor and absorber technology, which is applied in the field of all-semiconductor mid-infrared frequency-tunable absorbers, achieves the effects of simple structure, changing optical response, and enriching implementation means

Active Publication Date: 2018-08-10
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these studies mainly focus on microwave, terahertz, and near-infrared bands, and tunable absorbers working in the mid-infrared band are rarely reported.

Method used

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  • All-semiconductor mid-infrared tunable absorber
  • All-semiconductor mid-infrared tunable absorber
  • All-semiconductor mid-infrared tunable absorber

Examples

Experimental program
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Effect test

no. 1 example

[0026] see Figure 1 to Figure 3 As shown, the present invention provides an all-semiconductor mid-infrared tunable frequency absorber, comprising:

[0027] An n / p-type doped semiconductor layer 103 is rectangular, and the thickness of the n / p-type doped semiconductor layer 103 is greater than the tunneling depth of light waves in the working band of the absorber. It is used as a reflector, and the n / p-type The material of the p-type doped semiconductor layer 103 is a semiconductor material that realizes metallicity through doping, and the n / p-type doped semiconductor layer 103 described in the first embodiment is an n-type doped semiconductor material (InAs) with a thickness greater than 1 micron;

[0028] Two first bias voltage control parts 101, which are formed at opposite ends of the n / p-type doped semiconductor layer 103;

[0029] An intrinsic semiconductor dielectric isolation layer 105, which is fabricated on the n / p type doped semiconductor layer 103, the length of ...

no. 2 example

[0036] see Figure 5 to Figure 7 As shown, the present invention provides an all-semiconductor mid-infrared broadband frequency-tunable absorber. The structure of the second embodiment of the present invention is basically the same as that of the first embodiment, except that the n / p type doped semiconductor grating strips 104 are in groups of two, and the width of one strip in each group is less than the width of another (see Image 6 ), the strip widths are 190-210 nanometers and 390-410 nanometers respectively, and the grating period is 2 microns; the thickness of the intrinsic semiconductor dielectric isolation layer 105 is 330-350 nanometers.

[0037] Figure 8 The doping concentration of the n-type doped semiconductor layer (InAs) and the n-type doped semiconductor compound grating layer (InAs) of this all-semiconductor mid-infrared broadband tunable frequency absorber in the second embodiment of the present invention is N= Absorption lines at 7E19 and N=9E19.

[003...

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Abstract

The invention provides an infrared adjustable frequency absorber in an all-semiconductor. The infrared adjustable frequency absorber comprises a rectangular n(p)-type doped semiconductor layer, two first bias control parts which are manufactured on opposite sides of the n(p)-type doped semiconductor layer, an intrinsic semiconductor dielectric isolation layer which is manufactured on the n(p)-type doped semiconductor layer, a number of n(p)-type doped semiconductor grating strips which form a grating layer, and two second bias control parts which are manufactured on both ends of the n(p)-type doped semiconductor grating strips on the intrinsic semiconductor dielectric isolation layer. The length of the intrinsic semiconductor dielectric isolation layer is less than the distance between two first bias control parts. The strips share the same width. Each two n(p)-type doped semiconductor grating strips form a group, wherein the width of one strip is smaller than the width of the other strip. A number of n(p)-type doped semiconductor grating strips are longitudinally manufactured on the intrinsic semiconductor dielectric isolation layer. The n(p)-type doped semiconductor grating strips excite a surface plasmon mode.

Description

technical field [0001] The invention relates to an all-semiconductor mid-infrared frequency-tunable absorber, in particular to an all-semiconductor ultra-thin sub-wavelength mid-infrared absorber capable of realizing frequency modulation. Background technique [0002] In the electromagnetic spectrum, the spectral interval with a wavelength range of 2.5-25 microns is usually called the mid-infrared spectral region. Mid-infrared is also known as thermal infrared or emission infrared, which can be used for night-time infrared scanning imaging. In addition, the fundamental frequency absorption bands of most organic and inorganic substances appear in the mid-infrared region. Mid-infrared absorbers can be used as absorbing elements for thermal detectors / emitters, or as coating materials to reduce spurious emissions of electromagnetic waves. Therefore, it is of great significance to study the properties of materials in the mid-infrared band. [0003] In recent years, perfect abs...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/00
CPCG02B5/003
Inventor 郑婉华王少华王宇飞祁帆郭小杰马庆艳
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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