Low on-resistance lateral double-diffusion metal oxide semiconductor device
An oxide semiconductor and lateral double-diffusion technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems that LDMOS withstand voltage and on-resistance cannot be optimized, and it is difficult to achieve low on-resistance LDMOS. Low on-resistance, reduced on-resistance, and low on-resistance effects
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[0023] A low on-resistance lateral double-diffusion metal oxide semiconductor device, comprising: a P-type substrate 1, a high-voltage N-type region 2 is provided above the P-type substrate 1, and an N-type region is provided above the high-voltage N-type region 2 The N-type drift region 3 and the P-type body region are provided with an N-type drain region 6 and a shallow trench isolation region in the N-type drift region 3, and an N-type source region 5 and a P-type region 7 are provided in the P-type body region 4. A gate oxide layer 8 is also provided above the high-voltage N-type region 2, and both ends of the gate oxide layer 8 extend to above the P-type body region 4 and above the first shallow trench isolation region 13, respectively. A polysilicon gate field plate 9 is arranged above 8 and a drain metal contact 10, a source metal contact 11 and a body metal contact 12 are respectively provided on the upper surfaces of the N-type drain region 6, the N-type source region 5...
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