Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of porous zinc oxide nanowire arrays

A nanowire array and porous zinc oxide technology, applied in the field of nanomaterials, can solve the problems of difficult recycling and small specific surface area, and achieve the effect of solving small specific surface area, improving specific surface area and excellent performance

Active Publication Date: 2016-10-26
TSINGHUA UNIV
View PDF3 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The existing one-dimensional zinc oxide nanowire array has the problem of small specific surface area; while the existing porous zinc oxide nanomaterial method is a scattered powder, which is difficult to recycle in application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of porous zinc oxide nanowire arrays
  • Preparation method of porous zinc oxide nanowire arrays
  • Preparation method of porous zinc oxide nanowire arrays

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] (1) Pretreatment of the substrate monocrystalline silicon wafer: Cut the monocrystalline silicon wafer substrate into a suitable shape, and perform ultrasonic cleaning with acetone, alcohol, and deionized water for 15 minutes in sequence.

[0032] (2) Preparation of zinc oxide seed layer: use the FJL-5600 ion beam surface treatment and irradiation simulation device to grow zinc oxide film on the pretreated single crystal silicon wafer by radio frequency sputtering as the zinc oxide seed layer, thin film The thickness is 10-30nm.

[0033] (3) Reaction solution preparation: configure ZnCl 2 Aqueous solution with a concentration of 0.2mol / L, after mixing evenly by magnetic stirring, add a certain amount of concentrated NH 3 ·H 2 O, the solution gradually becomes milky white, and the pH value of the reaction solution is 9.5 to 10.5 at this time, continue to stir until the solution is evenly mixed.

[0034] (4) Growth of porous zinc oxide nanowire array: transfer the reac...

Embodiment 2

[0037] (1) Pretreatment of the substrate monocrystalline silicon wafer: Cut the monocrystalline silicon wafer substrate into a suitable shape, and perform ultrasonic cleaning with acetone, alcohol, and deionized water for 15 minutes in sequence.

[0038](2) Preparation of zinc oxide seed layer: use the FJL-5600 ion beam surface treatment and irradiation simulation device to grow zinc oxide film on the pretreated single crystal silicon wafer by radio frequency sputtering as the zinc oxide seed layer, thin film The thickness is 10-30nm.

[0039] (3) Reaction solution preparation: configure ZnCl 2 Aqueous solution with a concentration of 0.2mol / L, after mixing evenly by magnetic stirring, add a certain amount of concentrated NH 3 ·H 2 O, the solution gradually becomes milky white, and the pH value of the reaction solution is 9.5 to 10.5 at this time, continue to stir until the solution is evenly mixed.

[0040] (4) Growth of porous zinc oxide nanowire array: transfer the react...

Embodiment 3

[0043] (1) Pretreatment of the substrate monocrystalline silicon wafer: Cut the monocrystalline silicon wafer substrate into a suitable shape, and perform ultrasonic cleaning with acetone, alcohol, and deionized water for 15 minutes in sequence.

[0044] (2) Preparation of zinc oxide seed layer: use the FJL-5600 ion beam surface treatment and irradiation simulation device to grow zinc oxide film on the pretreated single crystal silicon wafer by radio frequency sputtering as the zinc oxide seed layer, thin film The thickness is 10-30nm.

[0045] (3) Reaction solution preparation: configure ZnCl 2 Aqueous solution with a concentration of 0.2mol / L, after mixing evenly by magnetic stirring, add a certain amount of concentrated NH 3 ·H 2 O, the solution gradually becomes milky white, and the pH value of the reaction solution is 9.5 to 10.5 at this time, continue to stir until the solution is evenly mixed.

[0046] (4) Growth of porous zinc oxide nanowire array: transfer the reac...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention relates to a preparation method of porous zinc oxide nanowire arrays. The preparation method mainly includes the following steps that a zinc oxide seed layer grows on a pretreated substrate; a Zn ion reaction solution is prepared, and the PH value of the solution is regulated to be 9-11; the reaction solution is transferred to a stainless steel high-pressure reaction kettle, the substrate is immersed into the reaction solution and then is sealed, then the stainless steel high-pressure reaction kettle is put into a reaction furnace, heating is performed to reach 160-170 DEG C, and heat preservation is performed for 1-2 hours; an obtained sample is taken out, is flushed with deionized water and is subjected to drying processing, and the zinc oxide nanowire array with a porous structure and vertically and uniformly distributed on the substrate can be obtained. The problem that a porous zinc oxide powder material is not easily recovered in application is effectively solved, the problem that existing vertically and uniformly distributed one-dimensional zinc oxide nano-structures are small in specific surface area is solved, and the application field and prospect of the one-dimensional porous zinc oxide nano material are further widened.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, in particular to a method for preparing a porous zinc oxide nanowire array. Background technique [0002] Since the German scientist Gleiter proposed the concept of nanocrystals in the early 1980s, nanomaterials and technologies have aroused widespread concern in the scientific community, and a global wave of research on nanomaterials and technologies has set off. From the perspective of the research history of nanomaterials and technologies, it can be roughly divided into three stages: the first stage (before 1990), mainly the stage of laboratory exploration of nanomaterials and technologies, trying to synthesize various nanomaterials and nanomaterials using different preparation methods. Particle powder and film materials, and study the experimental scheme of characterizing nanomaterials, and explore the excellent properties of these novel nanomaterials; in the second stage (1990-19...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02B82Y40/00
CPCC01G9/02C01P2004/03C01P2004/16C01P2004/64
Inventor 李正操王国景李明阳李威
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com