Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Top-emitting light emitting device and preparation method thereof

A light-emitting device and top emission technology, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of complex process, difficult patterning process, high cost, etc. The effect of increasing the brightness

Inactive Publication Date: 2016-10-26
SHANGHAI UNIV
View PDF4 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Existing techniques generally require micromachining and patterning techniques to achieve a regular hemispherical microstructure surface on the surface of the device, which is not only complex and expensive, but also difficult to resist due to the light-emitting surface of the top-emitting light-emitting device is an organic material covered with a thin film metal. Micromachining complex patterning process, difficult to put into use

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Top-emitting light emitting device and preparation method thereof
  • Top-emitting light emitting device and preparation method thereof
  • Top-emitting light emitting device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0045] The preparation method of the above-mentioned top emission light-emitting device comprises the following steps:

[0046] Step S200, preparing a light-emitting unit.

[0047] Specifically, if the light-emitting unit is an organic light-emitting diode (OLED), the preparation of the light-emitting unit includes the following steps:

[0048] S221 , providing a substrate 10 and cleaning the substrate 10 .

[0049] The substrate 10 is usually made of glass with high transmittance.

[0050] The operation of cleaning the substrate 10 is as follows: the substrate 10 is ultrasonically treated with detergent, acetone, ethanol and isopropanol for 15 minutes respectively.

[0051] Of course, if the substrate 10 is clean, step S10 can be omitted.

[0052] S222, forming the anode 20 on the substrate.

[0053] The anode 20 is stacked on the surface of the substrate 10 . The anode 20 is a total reflection anode, and the material of the anode 20 is at least one selected from silver,...

Embodiment 1

[0094] First, the glass substrate was ultrasonically treated with detergent, acetone, ethanol and isopropanol for 15 min each. On the cleaned glass substrate, Ag with a thickness of 100nm was sequentially evaporated as a reflective anode, and MoO with a thickness of 10nm 3 As hole injection layer, 40nm NPB as hole transport layer, 60nm Alq 3 As the light-emitting layer and electron transport layer, LiF / Al (1nm / 1nm) is used as the electron injection layer, and 20nm Ag is used as the translucent cathode to complete the preparation of top-emitting OLED devices. Then transfer the top-emitting OLED device to an inert atmosphere glove box, and directly spin-coat 35 mg / ml PS solution dissolved in chloroform solution on the translucent cathode Ag of the top-emitting OLED device, rotate at 1500 rpm, and heat at 70°C for 7 minutes to quickly evaporate the solvent , to complete the preparation.

Embodiment 2

[0096] First, the glass substrate was ultrasonically treated with detergent, acetone, ethanol and isopropanol for 15 min each. On the cleaned glass substrate, Ag with a thickness of 100nm was sequentially evaporated as a reflective anode, and MoO with a thickness of 10nm 3 As hole injection layer, 40nm NPB as hole transport layer, 60nm Alq 3 As the light emitting layer and the electron transport layer, LiF / Al (1nm / 1nm) is used as the electron injection layer, and 20nm Ag is used as the translucent cathode to complete the preparation of the top emission OLED device. Then transfer the top-emitting OLED device to an inert atmosphere glove box, and directly spin-coat a 30 mg / ml PS solution dissolved in chloroform solution on the semi-transparent cathode Ag of the top-emitting OLED device, rotate at 1500 rpm, and heat at 70°C for 7 minutes to quickly evaporate the solvent. , to complete the preparation.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a top-emitting light emitting device and a preparation method thereof. The top-emitting light emitting device comprises a light emitting unit, wherein the light emitting unit comprises a light emitting surface, the surface of the light emitting surface of the light emitting unit is coated so as to form an anti-reflection layer, the anti-reflection layer is made from polystyrene or polymethyl methacrylate, and the surface of the anti-reflection layer is an uneven surface. The top-emitting light emitting device disclosed by the invention is high in brightness.

Description

technical field [0001] The invention relates to the field of thin-film electroluminescent devices, in particular to a top-emitting light-emitting device and a preparation method thereof. Background technique [0002] Traditional top-emitting light-emitting devices such as organic light-emitting diodes (OLEDs) or quantum-dot light-emitting diodes (QLEDs) do not add structures to increase light output in the light-emitting area, and diffuse scattering of top-emitting light-emitting devices will reduce the brightness and light emission of top-emitting light-emitting devices. The uniformity of the top-emitting light-emitting device results in the loss of part of the light, resulting in a decrease in the light utilization rate of the top-emitting light-emitting device. Theoretical calculations show that 80% of the light in the top-emitting light-emitting device will be consumed internally, and only 20% of the light can escape the surface of the top-emitting light-emitting device ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/52
CPCH10K50/85H10K2102/3026
Inventor 曹进周洁谢婧薇魏翔俞浩健
Owner SHANGHAI UNIV
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com