Top-emitting light emitting device and preparation method thereof

A light-emitting device and top emission technology, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of complex process, difficult patterning process, high cost, etc. The effect of increasing the brightness

Inactive Publication Date: 2016-10-26
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Existing techniques generally require micromachining and patterning techniques to achieve a regular hemispherical microstructure surface on the surface of the device, which is not only complex and expensive, but als

Method used

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  • Top-emitting light emitting device and preparation method thereof
  • Top-emitting light emitting device and preparation method thereof

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0045] The method for preparing the above-mentioned top-emitting light-emitting device includes the following steps:

[0046] Step S200, preparing a light-emitting unit.

[0047] Specifically, if the light emitting unit is an organic light emitting diode (OLED), the preparation of the light emitting unit includes the following steps:

[0048] S221. Provide the substrate 10 and clean the substrate 10.

[0049] The substrate 10 usually selects glass with a higher transmittance.

[0050] The operation of cleaning the substrate 10 is: the substrate 10 is ultrasonically treated with detergent, acetone, ethanol and isopropanol each for 15 minutes in sequence.

[0051] Of course, if the substrate 10 is clean, step S10 can be omitted.

[0052] S222, forming an anode 20 on the substrate.

[0053] The anode 20 is laminated on the surface of the substrate 10. The anode 20 is a total reflection anode, and the material of the anode 20 is selected from at least one of silver, aluminum, gold and platinu...

Example Embodiment

[0093] Example 1

[0094] First, the glass substrate was ultrasonically treated with detergent, acetone, ethanol, and isopropanol for 15 minutes. On the cleaned glass substrate, Ag with a thickness of 100nm was sequentially deposited as a reflective anode and MoO with a thickness of 10nm 3 As the hole injection layer, 40nm NPB as the hole transport layer, 60nm Alq 3 As the light-emitting layer and electron transport layer, LiF / Al (1nm / 1nm) is used as the electron injection layer, and 20nm Ag is used as the semi-transparent cathode to complete the preparation of the top-emitting OLED device. Then transfer the top-emitting OLED device to an inert atmosphere glove box, and directly spin-coat the 35mg / ml PS solution dissolved in chloroform solution on the translucent cathode Ag of the top-emitting OLED device, rotating at 1500rpm, heating at 70℃ for 7min to make the solvent volatilize quickly , Complete preparation.

Example Embodiment

[0095] Example 2

[0096] First, the glass substrate was ultrasonically treated with detergent, acetone, ethanol, and isopropanol for 15 minutes. On the cleaned glass substrate, Ag with a thickness of 100nm was sequentially deposited as a reflective anode and MoO with a thickness of 10nm 3 As the hole injection layer, 40nm NPB as the hole transport layer, 60nm Alq 3 As the light-emitting layer and electron transport layer, LiF / Al (1nm / 1nm) is used as the electron injection layer, and 20nm Ag is used as the semi-transparent cathode to complete the preparation of the top-emitting OLED device. Then transfer the top-emitting OLED device to an inert atmosphere glove box, spin-coat 30mg / ml PS solution dissolved in chloroform solution directly on the translucent cathode Ag of the top-emitting OLED device, rotate at 1500rpm, heat at 70℃ for 7min to make the solvent volatilize quickly , Complete preparation.

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Abstract

The invention discloses a top-emitting light emitting device and a preparation method thereof. The top-emitting light emitting device comprises a light emitting unit, wherein the light emitting unit comprises a light emitting surface, the surface of the light emitting surface of the light emitting unit is coated so as to form an anti-reflection layer, the anti-reflection layer is made from polystyrene or polymethyl methacrylate, and the surface of the anti-reflection layer is an uneven surface. The top-emitting light emitting device disclosed by the invention is high in brightness.

Description

technical field [0001] The invention relates to the field of thin-film electroluminescent devices, in particular to a top-emitting light-emitting device and a preparation method thereof. Background technique [0002] Traditional top-emitting light-emitting devices such as organic light-emitting diodes (OLEDs) or quantum-dot light-emitting diodes (QLEDs) do not add structures to increase light output in the light-emitting area, and diffuse scattering of top-emitting light-emitting devices will reduce the brightness and light emission of top-emitting light-emitting devices. The uniformity of the top-emitting light-emitting device results in the loss of part of the light, resulting in a decrease in the light utilization rate of the top-emitting light-emitting device. Theoretical calculations show that 80% of the light in the top-emitting light-emitting device will be consumed internally, and only 20% of the light can escape the surface of the top-emitting light-emitting device ...

Claims

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Application Information

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IPC IPC(8): H01L51/52
CPCH10K50/85H10K2102/3026
Inventor 曹进周洁谢婧薇魏翔俞浩健
Owner SHANGHAI UNIV
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