Top-emitting light emitting device and preparation method thereof
A light-emitting device and top emission technology, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of complex process, difficult patterning process, high cost, etc. The effect of increasing the brightness
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[0045] The method for preparing the above-mentioned top-emitting light-emitting device includes the following steps:
[0046] Step S200, preparing a light-emitting unit.
[0047] Specifically, if the light emitting unit is an organic light emitting diode (OLED), the preparation of the light emitting unit includes the following steps:
[0048] S221. Provide the substrate 10 and clean the substrate 10.
[0049] The substrate 10 usually selects glass with a higher transmittance.
[0050] The operation of cleaning the substrate 10 is: the substrate 10 is ultrasonically treated with detergent, acetone, ethanol and isopropanol each for 15 minutes in sequence.
[0051] Of course, if the substrate 10 is clean, step S10 can be omitted.
[0052] S222, forming an anode 20 on the substrate.
[0053] The anode 20 is laminated on the surface of the substrate 10. The anode 20 is a total reflection anode, and the material of the anode 20 is selected from at least one of silver, aluminum, gold and platinu...
Example Embodiment
[0093] Example 1
[0094] First, the glass substrate was ultrasonically treated with detergent, acetone, ethanol, and isopropanol for 15 minutes. On the cleaned glass substrate, Ag with a thickness of 100nm was sequentially deposited as a reflective anode and MoO with a thickness of 10nm 3 As the hole injection layer, 40nm NPB as the hole transport layer, 60nm Alq 3 As the light-emitting layer and electron transport layer, LiF / Al (1nm / 1nm) is used as the electron injection layer, and 20nm Ag is used as the semi-transparent cathode to complete the preparation of the top-emitting OLED device. Then transfer the top-emitting OLED device to an inert atmosphere glove box, and directly spin-coat the 35mg / ml PS solution dissolved in chloroform solution on the translucent cathode Ag of the top-emitting OLED device, rotating at 1500rpm, heating at 70℃ for 7min to make the solvent volatilize quickly , Complete preparation.
Example Embodiment
[0095] Example 2
[0096] First, the glass substrate was ultrasonically treated with detergent, acetone, ethanol, and isopropanol for 15 minutes. On the cleaned glass substrate, Ag with a thickness of 100nm was sequentially deposited as a reflective anode and MoO with a thickness of 10nm 3 As the hole injection layer, 40nm NPB as the hole transport layer, 60nm Alq 3 As the light-emitting layer and electron transport layer, LiF / Al (1nm / 1nm) is used as the electron injection layer, and 20nm Ag is used as the semi-transparent cathode to complete the preparation of the top-emitting OLED device. Then transfer the top-emitting OLED device to an inert atmosphere glove box, spin-coat 30mg / ml PS solution dissolved in chloroform solution directly on the translucent cathode Ag of the top-emitting OLED device, rotate at 1500rpm, heat at 70℃ for 7min to make the solvent volatilize quickly , Complete preparation.
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