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Laser diode chip having coated laser facet

A laser diode and laser technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve problems such as damage, optical catastrophe damage, and high sensitivity consumption of laser end faces, so as to reduce the risk of crack formation and reduce diffusion. or accumulation of particles, protecting the effect of degrading effects

Active Publication Date: 2016-10-26
OSRAM OPTO SEMICON GMBH & CO OHG
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  • Claims
  • Application Information

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Problems solved by technology

Furthermore, there is the risk that during operation of the laser diode, due to electrostatic interactions, particles accumulate on the laser end face, which particles can cause shadowing effects in the far field, a reduction in the slope of the laser characteristic curve or overheating of the mirrors Until Destruction (COD, Optical Cataclysm Damage)
[0005] Furthermore, the high sensitivity of the laser facets necessitates a very high effort when mounting the laser diode chip.

Method used

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  • Laser diode chip having coated laser facet
  • Laser diode chip having coated laser facet
  • Laser diode chip having coated laser facet

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Embodiment Construction

[0043] exist figure 1 The laser diode chip 1 , shown schematically in cross section in , has a semiconductor layer sequence applied to a substrate 6 .

[0044] The semiconductor layer sequence comprises, for example, a buffer layer 2 applied to a substrate 6 , a first cladding layer 3 a , a first waveguide layer 4 a , an active layer 5 , a second waveguide layer 4 b and a second cladding layer 3 b. The semiconductor layer sequence can contain further layers which are not shown for the sake of simplicity. Furthermore, at least subregions of the semiconductor layer sequence can be structured, for example into a ridge waveguide structure. Suitable waveguide structures for laser diode chips are known per se and are not shown in detail for the sake of simplicity.

[0045] The active layer 5 of an edge-emitting semiconductor laser can be formed, for example, as a pn junction, as a double heterostructure, as a single-quantum system structure or as a multi-quantum system structure....

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PUM

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Abstract

The invention relates to a laser diode chip (1) which comprises at least one laser facet (9) with a covering (10). Said covering (10) comprises at least one inorganic layer (14, 15, 16, 17, 18) and at least one organic layer (20, 21, 22).

Description

technical field [0001] The invention relates to a laser diode chip having at least one laser facet which is provided with a coating. [0002] This patent application claims priority from German patent application 102014102360.9, the disclosure of which is incorporated herein by reference. Background technique [0003] For example, laser diode chips which can emit in the ultraviolet spectral range, in the visible spectral range or in the infrared spectral range are used in many applications, for example in projection devices, in lighting technology or in optical sensors, for example for Gesture Recognition. [0004] In many applications of laser diode chips, achievable high optical power densities are used. However, the high optical power densities achieved in laser diode chips lead to the fact that in particular the light-emitting laser facets are subjected to very high electrical, optical and thermal loads. In particular, it has been found that during operation of the la...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/028
CPCH01S5/0282H01S5/028H01S5/0283H01S5/0287H01S5/0281H01S5/02469
Inventor 艾尔弗雷德·莱尔塞巴斯蒂安·特格尔索菲娅·赫普曼
Owner OSRAM OPTO SEMICON GMBH & CO OHG