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A semiconductor material containing bismuth and halogen and its preparation and analysis method

A semiconductor and halogen technology, applied in chemical instruments and methods, chemical analysis by titration, bismuth compounds, etc., can solve the problems of materials being unstable to water and not having a perovskite-like structure, and achieve stable and reliable product properties The effect of mild control and reaction conditions

Active Publication Date: 2017-12-12
SHANGHAI TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the known A 3 m 2 x 9 Type compounds, containing Sb 3+ The material is unstable to water, Cs 3 Bi 2 Br 9 It is bright yellow and only absorbs blue light in visible light, while Cs 3 Bi 2 I 9 at room temperature by the isolated Bi 2 I 9 3- Ionic composition, no perovskite-like structure
These existing materials are not ideal catalyst materials for photolysis of water to produce hydrogen

Method used

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  • A semiconductor material containing bismuth and halogen and its preparation and analysis method
  • A semiconductor material containing bismuth and halogen and its preparation and analysis method
  • A semiconductor material containing bismuth and halogen and its preparation and analysis method

Examples

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Embodiment 1

[0043] Example 1: Cs 3 Bi 2 Br 3 I 6

[0044] A semiconducting material containing bismuth and halogens with the chemical formula Cs 3 Bi 2 Br 3 I 6 , has a perovskite-like crystal structure, the space group is P-3m1, and its preparation method is:

[0045]

[0046] Accurately weigh 588mg (0.300mmol) of Cs 3 Bi 2 I 9 With 230mg (0.150mmol) of Cs 3 Bi 2 Br 9 Grind and mix evenly and put it into a glass ampoule, evacuate to below 20Pa, fill it with 1 / 3 atmospheric pressure of nitrogen and seal it, and heat to 640°C under the protection of nitrogen to react for 6 hours to obtain a red-black solid.

[0047] Visible diffuse reflectance spectrum as figure 2 As shown in curve b, the optical bandgap E g =2.07eV.

[0048] The powder XRD pattern is as follows Figure 5 As shown, the result of unit cell refinement: Trigonal crystal system, P-3m1 space group (No.164), lattice parameters Molecular formula volume The unit cell refinement results show that the semico...

Embodiment 2

[0055] Example 2: Cs 3 Bi 2 BrI 8

[0056] A semiconducting material containing bismuth and halogens with the chemical formula Cs 3 Bi 2 BrI 8 , has a perovskite-like crystal structure, the space group is P-3m1, and its preparation method is:

[0057]

[0058] Accurately weigh 784mg (0.400mmol) of Cs 3 Bi 2 I 9 With 76.8mg (0.0500mmol) of Cs 3 Bi 2 Br 9 Grind and mix evenly and put it into a glass ampoule, evacuate to below 20Pa, fill with 1 / 3 atmospheric pressure of nitrogen and seal it, heat to 550°C under nitrogen protection and react for 6 hours to obtain a red-black solid.

[0059] Visible diffuse reflectance spectrum as figure 2 As shown in curve a, the optical bandgap E g = 1.99eV.

[0060] The powder XRD pattern is as follows Figure 6 As shown, the result of unit cell refinement: Trigonal crystal system, P-3m1 space group (No.164), lattice parameters Molecular formula volume The unit cell refinement results show that the semiconductor material co...

Embodiment 3

[0067] Example 3: Cs 3 Bi 2 Br 6 I 3

[0068] A semiconducting material containing bismuth and halogens with the chemical formula Cs 3 Bi 2 Br 6 I 3 , has a perovskite-like crystal structure, the space group is P-3m1, and its preparation method is:

[0069]

[0070] Accurately weigh 294mg (0.150mmol) of Cs 3 Bi 2 I 9 with 461mg (0.300mmol) of Cs 3 Bi 2 Br 9 Grind and mix evenly and put it into a glass ampoule, evacuate to below 20Pa, fill it with 1 / 3 atmospheric pressure of nitrogen, seal it, and heat it to 640°C for 6 hours to obtain an orange-red solid.

[0071] Visible diffuse reflectance spectrum as figure 2 As shown in curve e, the optical bandgap E g = 2.23eV.

[0072] The powder XRD pattern is as follows Figure 7 As shown, the result of unit cell refinement: Trigonal crystal system, P-3m1 space group (No.164), lattice parameters Molecular formula volume The unit cell refinement results show that the semiconductor material containing bismuth and...

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Abstract

The invention provides a semiconductor material containing bismuth and halogen and a preparation and analysis method thereof. The semiconductor material containing bismuth and halogen is characterized in that it has a chemical formula of Cs3Bi2BrxI9-x, wherein x=1-6.85. The semiconductor material with a general formula of Cs3Bi2BrxI9-x provided by the invention has adjustable direct bandgap energy, in an embodiment of the invention, the adjustable direct bandgap energy can be adjusted to a minimum of 1.99eV, which is lower than that of existing material Cs3Bi2Br9 or Cs3Bi2I9, so that the semiconductor material has a wider absorption wavelength range in a visible spectrum.

Description

technical field [0001] The invention belongs to new materials, and relates to a class of semiconductor materials containing bismuth and halogens and their preparation and analysis methods, in particular to a chemical formula of Cs 3 Bi 2 Br x I 9-x (where x=1-6.85) and its preparation and analysis methods. Background technique [0002] At present, with the increasingly prominent energy crisis and environmental pollution, it is imminent to find a clean energy to replace traditional fossil energy. Due to its many advantages such as high calorific value, light weight, no pollution, storage and transportation, and hydrogen is one of the most abundant elements on the earth, hydrogen energy is considered to be the most promising clean energy to replace traditional fossil energy. The traditional ways of obtaining hydrogen energy are mainly hydrogen production by electrolysis of water and hydrogen production by fossil fuels. Hydrogen production by electrolysis of water consumes ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G29/00G01N31/16
CPCC01G29/006C01P2002/72C01P2002/82G01N31/16
Inventor 米启兮汪瑶
Owner SHANGHAI TECH UNIV
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