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Preparation method and application of molybdenum carbide two-dimensional material

A two-dimensional material, molybdenum carbide technology, applied in the field of two-dimensional materials, can solve the problems of difficult control of the growth process and high growth temperature, and achieve the effects of stable controllability, easy operation, simple preparation process, and high electrical conductivity

Active Publication Date: 2021-06-08
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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Problems solved by technology

[0004] The invention provides a preparation method and application of a molybdenum carbide two-dimensional material, which solves the problem that the growth process is difficult to control due to the high growth temperature in the preparation process of the existing molybdenum carbide two-dimensional material

Method used

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  • Preparation method and application of molybdenum carbide two-dimensional material
  • Preparation method and application of molybdenum carbide two-dimensional material
  • Preparation method and application of molybdenum carbide two-dimensional material

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Embodiment 1

[0043] Step 1: Using a Chemical Vapor Deposition System to MoO 3 Powder (99.99%) was used as a precursor to synthesize MoO by thermal reduction reaction 2 Nano two-dimensional material, the material has the advantages of adjustable thickness, adjustable lateral size, high conductivity and so on.

[0044] The specific preparation method is: use chemical vapor deposition system to MoO 3 Powder (99.99%) as a precursor for the synthesis of 2D MoO 2 Flakes, 20mg high-purity MoO 3 powder into a magnetic boat, and the SiO 2 / Si substrate (thermal oxidation top layer is 260nmSiO 2 ) face down on the MoO 3 Powder on top. After pushing the magnetic boat into the center of the tube furnace and closing the tube furnace, feed high-purity Ar at a speed of 200 sccm for 30 minutes to ensure a stable oxygen-free environment in the furnace, then keep the Ar flow at 100 sccm, The furnace was heated to 790°C at a heating rate of 10°C / min, and kept for 5 minutes, and finally the system was ...

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Abstract

The invention discloses a preparation method and application of a molybdenum carbide two-dimensional material, belongs to the technical field of two-dimensional materials, and solves the problem that the growth process is difficult to control due to overhigh growth temperature in the preparation process of the existing molybdenum carbide two-dimensional material. The preparation method at least comprises the following steps of: synthesizing MoO2 nanosheets by taking MoO3 powder as a precursor; and reacting the MoO2 nanosheets with a carbon source to obtain the alpha-Mo2C nanosheets. The preparation method of the molybdenum carbide two-dimensional material provided by the invention is simple, high in controllability and low in production cost. The two-dimensional alpha-Mo2C and MoO2 single crystals prepared by the method have a good application prospect in emerging electronic equipment.

Description

technical field [0001] The invention belongs to the technical field of two-dimensional materials, and in particular relates to a preparation method and application of a molybdenum carbide two-dimensional material. Background technique [0002] Two-dimensional materials refer to materials in which electrons can only move freely (planar motion) on the nanoscale (1-100nm) in two dimensions, such as nano-films, superlattices, and quantum wells. Since the successful synthesis of MXene by a selective etching method in 2011, it has become a member of the family of 2D materials due to its excellent stability and metallic properties. Molybdenum carbide (α-Mo 2 C) As a widely studied MXene with excellent stability, it has shown great potential in the fields of thermoelectricity, electrochemical catalysis, and energy storage. [0003] The existing method for preparing two-dimensional molybdenum carbide materials is to use chemical vapor deposition (CVD) to chemically convert and synt...

Claims

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Application Information

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IPC IPC(8): C01B32/949B82Y40/00H01L29/24H01L29/772
CPCC01B32/949B82Y40/00H01L29/24H01L29/772C01P2004/24
Inventor 刘伟王渝乔
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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