A kind of preparation method of nitrogen-doped graphene film

Abstract

The present invention provides a nitrogen-doped graphene film preparation method, which comprises: providing a substrate, placing the substrate in a dual-temperature zone system and placing a carbon-nitrogen source in the dual-temperature zone system, heating to deposit on the substrate surface so as to form a precursor layer of the nitrogen-doped graphene, introducing a gas carbon source, and carrying out a carbon deposition reaction at a high temperature to form the nitrogen-doped graphene film. According to the present invention, on the basis of the growth of the nitrogen-doped graphene from the solid-liquid carbon-nitrogen source, the small molecule gas carbon source is introduced to improve the precursor layer, such that the quality of the nitrogen-doped graphene film with disadvantages of more defects, poor electrical property and uncontrollable doping concentration in the existing method is improved so as to obtain the N type graphene film with advantages of excellent electrical property, less defect and controllable nitrogen doping.

Description

technical field [0001] The invention relates to the field of material preparation and processing, in particular to a method for preparing a nitrogen-doped graphene film. Background technique [0002] Graphene is a two-dimensional material with a honeycomb structure formed by a single layer of carbon atoms arranged in a hexagonal structure. The mechanical properties have received extensive attention from researchers from all over the world. These excellent properties make graphene have potential applications in many fields such as touch screens, field effect transistors, sensitive sensors, solar cells, high-performance batteries, and supercapacitors. However, the zero-bandgap characteristic of intrinsic graphene also brings difficulties to its application in the field of electronic devices, such as large leakage current and low switching ratio, so how to obtain n-type and p-type graphene has become an important issue in its electrical applications. key in . Scientists have...

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Problems solved by technology

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for preparing a nitrogen-doped graphene film, which is used to solve the difficulty in controlling the doping concentration of the nitrogen-doped graphene film in the prior art, and the lattice defects. Many, poor electrical properties, etc.

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