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Thermoelectric coupling IGBT (Insulated Gate Bipolar Translator) module transient model establishment method

A transient model, thermoelectric coupling technology, applied in electrical digital data processing, special data processing applications, instruments, etc., can solve problems such as long simulation time, unclear physical concepts, and difficult parameter adjustment.

Active Publication Date: 2016-11-23
STATE GRID CORP OF CHINA +3
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It is very difficult for users who lack the knowledge of device physics to obtain the parameters of the mechanism model, and the model contains complex semiconductor physics equations, which requires a large amount of calculation, long simulation time, and problems such as calculation convergence
Behavioral models are relatively fast in simulation speed, but only consider the external characteristics of the device, the physical concept is not clear, the parameters are not easy to adjust, and the model is relatively poor in versatility

Method used

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  • Thermoelectric coupling IGBT (Insulated Gate Bipolar Translator) module transient model establishment method
  • Thermoelectric coupling IGBT (Insulated Gate Bipolar Translator) module transient model establishment method
  • Thermoelectric coupling IGBT (Insulated Gate Bipolar Translator) module transient model establishment method

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Embodiment 1

[0061] The invention of this example provides a method for establishing a transient model of a thermoelectrically coupled IGBT module, including:

[0062] Step 1: Establish the IGBT switch transient model;

[0063] Step 2: Establish the reverse recovery model of the anti-parallel diode;

[0064] Step 3: According to the IGBT switching transient model and diode reverse recovery model obtained in Step 1 and Step 2, connect the two according to the IGBT module circuit structure, add the circuit structure module and the control parameter module, and establish the IGBT module switching transient model .

[0065] Step 4: Build the IGBT average power consumption module.

[0066] Step 5: Build the IGBT average thermal resistance module.

[0067] Step 6: Build the IGBT thermoelectric coupling module.

[0068] Step 7: Combine the modules established in the above steps into a complete thermoelectric coupling IGBT module transient model.

[0069] The IGBT transient model includes a M...

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Abstract

The invention relates to a thermoelectric coupling IGBT (Insulated Gate Bipolar Translator) module transient model establishment method. The thermoelectric coupling IGBT module transient model establishment method comprises the following steps: establishing an IGBT module switch transient model; establishing an IGBT average power consumption module; establishing an IGBT average thermal resistance module; establishing an IGBT thermoelectric coupling module; establishing a thermoelectric coupling IGBT module transient model according to the modules. According to the technical scheme provided by the invention, various operating states of the IGBT module in circuit simulation can be realized; moreover, switch transient characteristics of the voltage current peak, the tail current, a miller platform, diode reverse recovery and the like of the IGBT module can be simulated under a nanosecond step length, and the influence on device parameters caused by thermal characteristics of temperature loss consumption and the like is considered; the thermoelectric coupling characteristics are simulated.

Description

Technical field: [0001] The invention relates to the field of simulation of power electronics technology, and more particularly relates to a method for establishing a transient model of a thermoelectric coupling IGBT module. Background technique: [0002] Insulated gate bipolar transistors combine the dual advantages of power MOSFETs and bipolar devices, and have the characteristics of high input impedance, high voltage resistance, large current capacity, and fast switching speed, and have received more and more attention and research. In the current field of power electronics technology, high-voltage IGBTs and diodes constitute switching modules that have been widely used in various voltage source power electronic conversion devices, such as voltage source converter type direct current transmission (VSC-HVDC), static var compensator ( STATCON) and so on, it is more and more important for the research and modeling of its switching transient process. Therefore, establishing ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
Inventor 于弘洋陆振刚潘冰周飞荆平王瑞琪赵成勇徐延明许建中宋方方
Owner STATE GRID CORP OF CHINA
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