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A self-aligned dual pattern imaging method

A technology of double patterning and imaging method, which is applied in the photoplate making process of pattern surface, microlithography exposure equipment, instruments, etc., can solve the problems of self-aligned double pattern imaging, such as time-consuming, high cost, and large consumption of raw materials. , to achieve the effect of reducing the steps of coating photoresist, reducing the flow and reducing the cost

Active Publication Date: 2017-10-27
北京中科微投资管理有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The present invention aims to solve the problems of long time-consuming and high cost of raw material consumption in the existing self-alignment double pattern imaging, and provides a self-alignment double pattern imaging method, which can effectively reduce the cost of the existing method

Method used

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  • A self-aligned dual pattern imaging method
  • A self-aligned dual pattern imaging method
  • A self-aligned dual pattern imaging method

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Experimental program
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Embodiment 1

[0045] Step S01, providing a substrate (not shown in the figure), on which the layer to be etched 50, the first mask layer 40, the second mask layer 30, and the first mask layer 20 are sequentially formed, such as image 3 shown.

[0046]In this embodiment, a substrate to be processed is provided, and the substrate may be a Si substrate, a Ge substrate, a SiGe substrate, an SOI (Silicon On Insulator, silicon on insulator) substrate, or the like. In other embodiments, it can also be a substrate including other elemental semiconductors or compound semiconductors, such as GaAs, InP or SiC, etc., it can also be a stacked structure, such as Si / SiGe, etc., and it can also be other epitaxial structures, such as SGOI (Silicon germanium on insulator) and so on. In this embodiment, the substrate is a bulk silicon substrate, and a layer to be etched 50, a first mask layer 40, a second mask layer 30, and a first mask layer 20 are formed on the substrate. Refer to figure 2 shown.

[00...

Embodiment 2

[0076] In this embodiment, different from Embodiment 1, the photolithography process in this embodiment is completed by using negative photoresist and positive developing process, and at the same time, the method of correcting the photoresist is adopted to finally achieve the first mask The layer graph 400 is corrected to obtain the second graph 410 . In this embodiment, only the different parts from the first embodiment are described, and the same parts are only briefly explained.

[0077] Step S11, providing a substrate on which the layer to be etched 50, the first mask layer 40, the second mask layer 30, and the first mask layer 20 are sequentially formed, such as image 3 shown.

[0078] In this embodiment, the substrate is a Ge substrate, which is mainly used in the field of high-speed devices. And a layer to be etched 50 , a first mask layer 40 , a second mask layer 30 , and a first mask layer 20 are formed on the substrate. The layer to be etched 50 , the first mask ...

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Abstract

The invention provides a self-aligned double pattern imaging method, comprising: providing a substrate, on which a layer to be etched, a first mask layer, a second mask layer, and a first photomask layer are sequentially formed; Provide a first mask and a second mask, the first mask provides key graphics, and the second mask provides non-key graphics; respectively use the first mask and the second mask for the first mask Layer photolithography; etching, forming the first pattern on the second mask layer, and removing the first mask layer; forming sidewalls around the first pattern, removing the first pattern; using the sidewall as a mask The film is etched, the first mask layer pattern is formed in the first mask layer, the sidewall is removed, and it is corrected to obtain the second pattern; etching is performed to transfer the second pattern to the layer to be etched , and remove the first mask layer. The method provided by the invention reduces the step of coating the photoresist and the flow of the wafer between different devices, and can effectively reduce the cost of the photolithography process.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a self-aligned double pattern imaging method. Background technique [0002] Self-aligned double patterning (self-aligned double patterning) technology has been used in fin transistor (FinFET) Fin layer and non-volatile flash memory (NAND) key layer manufacturing process to improve on-chip graphics Density, to achieve smaller cycle pattern imaging. [0003] The basic principle of self-aligned dual pattern imaging technology is to decompose a set of circuit patterns into two sets of patterns, usually high-density key patterns and relatively low-density non-key patterns, and then perform imaging separately to improve imaging. quality. [0004] At present, in the application of the self-aligned dual pattern imaging process, the main steps include: first, forming the pattern of the high-density key pattern. For the high-density key pattern, the pattern is usually obtained ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G03F1/36H01L21/027
Inventor 张利斌韦亚一
Owner 北京中科微投资管理有限责任公司
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