Method for manufacturing split-gate flash memory device
A device manufacturing method and a technology of split-gate flash memory, which are applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as programming crosstalk failure, avoid the formation of reverse tips, and improve programming crosstalk failure. problem, the effect of eliminating adverse effects
Active Publication Date: 2019-05-03
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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[0005] The purpose of the present invention is to provide a method for manufacturing a split-gate flash memory device, which can avoid the formation of the reverse tip of the polysilicon layer of the word line, thereby improving the programming crosstalk failure problem caused by the reverse tunneling phenomenon
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[0029] In order to make the purpose and features of the present invention more obvious and understandable, the specific implementation of the present invention will be further described below in conjunction with the accompanying drawings. However, the present invention can be implemented in different forms and should not be limited to the described embodiments.
[0030] Please refer to figure 2 , the present invention provides a method for manufacturing a split-gate flash memory device, comprising the following steps:
[0031] S1, providing a semiconductor substrate, on which a floating gate oxide layer, a floating gate polycrystalline layer, a floating gate silicon nitride layer, and a patterned photoresist are sequentially formed;
[0032] S2, using the patterned photoresist as a mask, etching the floating gate silicon nitride layer until the floating gate polysilicon layer is exposed;
[0033] S3, using an oxygen plasma ashing process to remove the patterned photoresist, ...
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Abstract
The invention provides a method for manufacturing a split-gate flash memory device. By adding at least one gas among hydrogen, nitrogen and fluorine-based gases in the oxygen plasma ashing process after etching the silicon nitride layer of the floating gate, the floating The photoresist layer used for etching the gate silicon nitride layer will simultaneously remove the polymer residue attached to the sidewall of the floating gate silicon nitride layer, thereby eliminating the impact of the polymer residue on the etching of the subsequent floating gate polysilicon layer. The adverse effects of the etching process can be obtained to obtain the height of the tip of the floating gate that meets the requirements, thereby avoiding the formation of the reverse tip of the polysilicon layer of the word line, and improving the programming crosstalk failure problem caused by the reverse tunneling phenomenon.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a split-gate flash memory device. Background technique [0002] Flash memory, referred to as flash memory, is divided into two types: stackgate (stackgate) device and split gate (splitgate) device, wherein, the split gate device forms a word line as an erasing gate on one side of the floating gate, and the word line The line is used as the control gate. In terms of erasing and writing performance, the split-gate device effectively avoids the over-erasing effect of the stacked gate device, and the circuit design is relatively simple. Moreover, the split-gate structure utilizes hot electron injection at the source end for programming, which has higher programming efficiency, and thus is widely used in various electronic products such as smart cards, SIM cards, microcontrollers, and mobile phones. [0003] Please refer to Figure 1A , Figure 1A...
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IPC IPC(8): H01L27/11517H01L21/3065G03F7/36H10B41/00H10B69/00
CPCG03F7/36H01L21/3065H10B69/00H10B41/00
Inventor 徐涛汤志林陈宏王卉曹子贵
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP