Epitaxial growth technology for nitride semiconductor luminescent device

A nitride semiconductor and epitaxial growth technology, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of low luminous efficiency, NH3 waste, and large consumption of long-wave nitride semiconductor light-emitting devices, so as to improve nitrogen partial pressure, Inhibit concentration and improve the effect of alloy quality

Inactive Publication Date: 2016-12-07
YANGZHOU ZHONGKE SEMICON LIGHTING
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Problems solved by technology

This is one of the reasons for the relatively low luminous efficiency of long-wavelength nitride semiconductor light-emitting devices.
In addition, since NH 3 Thermal stability of NH when growing n

Method used

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  • Epitaxial growth technology for nitride semiconductor luminescent device

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Embodiment A

[0025] The In composition in the high In composition InGaN well layer is above 30%, and the growth temperature is between 600°C and 900°C. The nitrogen source required for growing a high In composition InGaN well layer is a nitrogen-containing compound with high decomposition ability below 700°C, and the V / III ratio of the nitrogen-containing compound to the group III source is 20-80:1.

Embodiment B

[0027] The In composition in the high In composition InGaN well layer is above 30%, and the growth temperature is between 600°C and 900°C. The nitrogen source required to grow a high In composition InGaN well layer is NH 3 A mixed gas composed of nitrogen-containing compounds with high decomposition ability below 700°C, the NH in the mixed gas 3 The mixing molar ratio of the nitrogen-containing compound with high decomposition ability below 700°C is 0-9:1, and the V / III ratio of the nitrogen source mixed gas to the Group III source is 20-1000:1.

[0028] Nitrogen-containing compounds that have a high decomposition ability below 700°C as described in Example A and Example B above may include the following compounds: monomethylhydrazine (CH 3 HNNH 2 , MMHy), dimethylhydrazine ((CH 3 ) 2 NNH 2 , DMHy), tert-butylhydrazine ((CH 3 ) 3 CHNNH 2 , TBHy), hydrazine (H2 NNH 2 ), etc., but not limited to this.

[0029] 5. An electron blocking layer 105 with a thickness of 15 nm...

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Abstract

The invention discloses an epitaxial growth technology for a nitride semiconductor luminescent device, and belongs to the field of semiconductor photoelectric technologies. When an InGaN trap layer with high In component of an InGaN/GaN multiple-quantum trap active layer with high In component is growing, adopted nitrogen sources comprise nitrogen-containing compounds with high resolution capability under 700 DEG C, so that InGaN alloy can be grown at relatively low temperatures; furthermore, more nitrogen atoms can be provided by the nitrogen-containing compounds compared with NH3 in traditional technologies, and nitrogen partial pressure in gaseous phase can be improved, which all facilitate combination of In, and thus the In component in InGaN alloy is improved, and meanwhile a series of problems brought by InGaN alloy epitaxial growth at high temperatures can also be avoided.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic technology, in particular to an epitaxial growth process technology of a nitride semiconductor light emitting device. Background technique [0002] The ternary alloy material InGaN, as the third-generation direct energy gap wide bandgap semiconductor, has broad application prospects in the field of optoelectronic technology. By changing the composition of In and Ga in the alloy, its forbidden band width can be continuously adjusted in the range of 0.7eV to 3.4eV, almost covering the entire visible light band. Therefore, the InGaN / GaN multi-quantum well structure is often used to grow the active regions of high-brightness blue, green and yellow semiconductor light-emitting devices. [0003] In recent years, with the continuous development of III-V compound semiconductor technology, blue LEDs based on InGaN system and red LEDs based on AlInGaP system have made great breakthroughs in perf...

Claims

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Application Information

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IPC IPC(8): H01L33/00
CPCH01L33/0075
Inventor 戴俊王明洋闫其昂李志聪孙一军王国宏
Owner YANGZHOU ZHONGKE SEMICON LIGHTING
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