Low Voltage Low Ripple Multistage Charge Pump

Abstract

The invention relates to the field of CMOS integrated circuits, and aims to solve the problem that a charge pump with a cross-coupling structure will generate leakage current, and eliminate the leakage current caused by non-ideal clocks and CMOS parasitics. The technical solution adopted in the present invention is a low-voltage, low-ripple multi-stage charge pump. The front N-1 stage charge pump includes six transistors and three capacitors, and a pair of reverse clocks CLK, ! CLK drive, in which NMOS transistors M1, M2, PMOS transistors M3, M4 and capacitors C1, C2 constitute the N-1 basic structure of the cross-coupled charge pump, and the gates and drains of the additional PMOS transistors M5 and M6 are respectively Connected to the gate and drain of M1, M2, the source of PMOS transistors M5, M6 is connected to a ground capacitor Cs to make it in a floating state; the substrates of all NMOS are connected to Vin. The invention is mainly used in the design and manufacture of CMOS integrated circuits.

Description

technical field [0001] The invention relates to the field of CMOS integrated circuits, in particular to the field of integrated circuits operating at low voltage. Background technique [0002] The charge pump is an important part of the integrated circuit, which is used to generate a DC output higher than the supply voltage or lower than the ground voltage in the circuit. It is often used in non-volatile memory and LCD driver circuits, and it is also used in some low-voltage circuits to improve the performance of certain circuits. [0003] figure 1 It is a four-stage cross-coupled charge pump. Each charge pump unit includes two branches, and each branch is composed of an NMOS transistor, a PMOS transistor and a charging capacitor. The two branches are symmetrically arranged, and the respective charging capacitors are connected to a pair of reverse non-overlapping clock driving signals CLK and CLKB, and the input voltage Vin is generally equal to the power supply voltage V...

AI Technical Summary

Problems solved by technology

[0008] In order to overcome the deficiencies of the prior art and solve the problem that the cross-coupled structure charge pump will generate leakage current, the present invention aims to propose a charge pump with an improved structure to eliminate the leakage current caused by non-ideal clock and CMOS parasitic

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