LED epitaxial wafer grown on magnesium aluminate scandium substrate and preparation method thereof

A LED epitaxial wafer, magnesium scandium aluminate technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the unfavorable high-quality GaN thin-film growth and high-performance GaN thin-film device industrialization, large-size substrate preparation process difficulties, substrate Poor bottom single crystal quality and other problems, to achieve the effect of heat dissipation, improve light reflection, and improve crystal quality
CN106257694AInactive Publication Date: 2016-12-28SOUTH CHINA UNIV OF TECH
3 Cites 3 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SOUTH CHINA UNIV OF TECH
Publication Date
2016-12-28
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses an LED epitaxial wafer grown on a magnesium aluminate scandium substrate. The LED epitaxial wafer comprises a GaN buffer layer grown on the magnesium aluminate scandium substrate, an Al nano island layer grown on the GaN buffer layer, a non-doped GaN layer grown on the Al nano island layer, an n-type doped GaN film grown on the non-doped GaN layer, an InGaN / GaN quantum well grown on the n-type doped GaN film and a p-type doped GaN film grown on the InGaN / GaN quantum well. The invention also discloses a preparation method of the LED epitaxial wafer grown on the magnesium aluminate scandium substrate The LED epitaxial wafer grown on the magnesium aluminate scandium substrate has the advantages of being simple in growth technology and low in preparation cost, and the prepared LED epitaxial wafer has smooth surface, low defect density and great photoelectric performance.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to an LED epitaxial wafer and a preparation method thereof, in particular to an epitaxial wafer grown on scandium magnesium aluminate (ScMgAlO 4 ) LED epitaxial wafer on substrate and preparation method thereof. Background technique

[0002] GaN and its related group III nitrides have excellent electrical, optical, and acoustic properties, and have been widely used in the preparation of light-emitting diodes (LEDs), laser diodes (LDs), and field-effect transistors.

[0003] Commercial LEDs are mainly epitaxially grown on sapphire substrates. On the one hand, due to the lattice mismatch between sapphire and GaN as high as 13.3%, a high dislocation density is formed during the epitaxial GaN film process, which reduces the carrier mobility of the material and shortens the carrier lifetime, which ultimately affects performance of GaN-based devices. On the other hand, since the thermal mismatch between sapphire heat and GaN is as hi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More