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Improved modified Siemens process polycrystalline silicon reduction furnace base plate

A Siemens method and polysilicon technology, applied in the improvement field of polysilicon reduction furnace chassis, can solve the problems of low primary conversion rate of gas raw materials, uneven quality of polysilicon rods, and small production capacity, etc., to increase heat radiation utilization rate and primary conversion rate The effect of improving and reducing energy consumption

Active Publication Date: 2017-01-04
哈尔滨化兴软控科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide an improved Siemens method polysilicon reduction furnace chassis; to solve the problems of low production capacity, high energy consumption, uneven quality of polysilicon rods generated, and low primary conversion rate of gas raw materials in existing polysilicon reduction furnaces question

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  • Improved modified Siemens process polycrystalline silicon reduction furnace base plate

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specific Embodiment approach 1

[0015] Specific implementation mode one: the following combination figure 1 This embodiment will be specifically described. An improved modified Siemens method polysilicon reduction furnace chassis of this embodiment includes a chassis 1, 4 first electrodes 6-1, 8 second electrodes 7-1, 16 third electrodes 8-1, and 16 fourth electrodes Electrode 9-1, 28 fifth electrodes 10-1, 1 chassis center air intake nozzle 2, 4 first air intake nozzles 3-1 and 8 second air intake nozzles 4-1;

[0016] The four first electrodes 6-1 are evenly arranged on the ring-shaped center line 6 of the first electrode ring, and the linear distance between the centers of two adjacent first electrodes 6-1 is 190 mm to 230 mm; the average of the eight second electrodes 7-1 It is divided into 4 second electrode groups, and the 4 second electrode groups are evenly arranged on the center line 7 of the electrode ring ring, and the straight-line distance between the centers of two adjacent second electrodes 7...

specific Embodiment approach 2

[0022] Embodiment 2: This embodiment differs from Embodiment 1 in that: the chassis 1 is a disc structure. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0023] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: the diameter of the chassis 1 is 2500mm. Others are the same as in the first or second embodiment.

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Abstract

The invention discloses an improved modified Siemens process polycrystalline silicon reduction furnace base plate, relates to improvement of the polycrystalline silicon reduction furnace base plate, and solves the problems that an existing polycrystalline silicon reduction furnace is low in production capacity and high in energy consumption, qualities of produced polycrystalline silicon rods are non-uniform, and one-time conversion rate of gas raw materials is low. A base plate center gas inlet nozzle is arranged at the center of the base plate, gas inlet nozzles are arranged on an annular centerline of a first ring and an annular centerline of a second ring of the base plate center gas inlet nozzle, four base plate gas outlets are formed in an annular centerline of a base plate gas outlet ring, and electrodes are arranged on annular centerlines of a first ring, a second ring, a third ring, a fourth ring and a fifth ring of an electrode. Compared with an original 24-pair rod reduction furnace, a 36-pair rod reduction furnace can increase productive rate, energy consumption is reduced, one-time conversion rate of mixed gas is increased, an original device is used, so that cost is saved, and production is ensured.

Description

technical field [0001] The invention relates to an improvement of the chassis of a polysilicon reduction furnace. Background technique [0002] Polysilicon is a basic material for the electronics industry and the solar photovoltaic industry. In recent years, the photovoltaic industry has developed rapidly, and the demand for polysilicon products is also increasing. At present, the relatively mature polysilicon production method is the improved Siemens method. Its production principle is to feed the mixed gas of trichlorosilane and hydrogen mixed in a certain proportion into the bell-type polysilicon reduction furnace, and the mixed gas will react chemically on the surface of the silicon core at about 1100 ° C to form silicon microcrystals. And evenly deposited on the surface of the silicon core, finally forming a silicon rod with a certain size. The existing polysilicon reduction furnace is mainly equipped with 24 pairs of silicon rods, which has a relatively small produc...

Claims

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Application Information

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IPC IPC(8): C01B33/035
CPCC01B33/035
Inventor 赵丽丽宋爱利赵宏月张胜涛
Owner 哈尔滨化兴软控科技有限公司
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