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Target recovering method

A technology with the same target and material, applied in metal material coating process, ion implantation plating, coating, etc., can solve problems affecting metal purity, high recycling cost, easy to mix impurities, etc., to achieve purity and sputtering performance Improvement, simple operation, and the effect of improving the recycling rate

Active Publication Date: 2017-01-04
宁波创润新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the smelting and casting process involves phase changes, which can easily introduce impurities that affect the purity of the final metal
In addition, the recovery costs of conducting smelting and casting operations are also high

Method used

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Experimental program
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Embodiment Construction

[0032] Firstly, step S11 is performed to provide at least two targets of the same material to be recycled.

[0033] In this embodiment, the target material to be recovered is the target material after vacuum sputtering. The shape of the target is not limited. The formation method of the target material to be recovered is as follows:

[0034] After vacuum sputtering, the target assembly is removed.

[0035] Afterwards, a grinding machine is provided, the grinding machine has an object table and a grinding head, the table surface of the object table is opposite and parallel to the grinding surface of the grinding head, and the target assembly is placed on the object table , the target is in contact with the stage, and the grinding head is in contact with the back plate.

[0036] Afterwards, the stage is set to rotate clockwise or counterclockwise, and the rotational speed of the stage is greater than or equal to 50 r / min and less than or equal to 200 r / min. The rotation dire...

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PUM

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Abstract

The invention discloses a target recovering method comprising the steps of providing at least two to-be-recovered targets made of the same material; machining the to-be-recovered targets for the first time to enable the surfaces of the to-be-recovered targets to be smooth; stacking the to-be-recovered targets machined for the first time to form a to-be-recovered target stacking layer; forging the to-be-recovered target stacking layer for the first time; and carrying out annealing treatment on the forged to-be-recovered target stacking layer for the first time. By using the method disclosed by the invention, the recovery cost of the targets subjected to vacuum sputtering coating can be reduced, and the recovery purity of the targets subjected to vacuum sputtering coating can be increased.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor targets, in particular to a method for recycling targets. Background technique [0002] Vacuum sputtering is a process in which electrons accelerate to the substrate under the action of an electric field and collide with argon atoms, ionizing a large number of argon ions and electrons, the electrons fly to the substrate, and the argon ions accelerate to bombard the target under the action of an electric field A large number of target atoms are sputtered out, and the neutral target atoms (or molecules) are deposited on the substrate to form a film, and finally achieve the purpose of forming a film on the surface of the substrate. Among them, the target assembly is composed of a target meeting the sputtering performance and a back plate combined with the target. Argon ions bombard the target in the target assembly, and the back plate plays a supporting role in the target assembly and has ...

Claims

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Application Information

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IPC IPC(8): C23C14/34
Inventor 吴景晖姚力军宋彦明张卫嘉
Owner 宁波创润新材料有限公司