Reaction cavity and semiconductor processing equipment

Abstract

The invention provides a reaction cavity and semiconductor processing equipment. The reaction cavity is internally provided with a pedestal for carrying a substrate and a press ring. The pedestal is internally provided with a back blow pipeline communicated with a back blow gas source. The upper surface of the pedestal is provided with an annular sealing device. When the pedestal drives the substrate to move upward and the press ring is jacked, the press ring is laminated in an edge region of the substrate. The annular sealing device is contacted with the back surface of the substrate, and thus the upper surface, at the inner side of the annular sealing device, of the pedestal is enabled to form sealing space with the back surface of the substrate. The back blow gas source provides back blow gas which is sent to the sealing space via the back blow pipeline. The reaction cavity provided by the invention ensures that the process time is greatly shortened under the precondition that the substrate is effectively cooled, and thus the productivity of the semiconductor processing equipment is improved, and the economic benefit is further increased.

Description

technical field [0001] The invention belongs to the technical field of microelectronic processing, and in particular relates to a reaction chamber and semiconductor processing equipment. Background technique [0002] In the semiconductor manufacturing process, especially the integrated circuit (IC) manufacturing process, through-silicon via (TSV) process and packaging (Packaging) process, it is necessary to perform a pre-cleaning process before the process to remove impurities on the surface of the substrate to ensure The process quality of the subsequent deposition process can ensure the performance of semiconductor devices. The basic principle of the pre-cleaning process is: an inductively coupled plasma generator is generally used to excite the process gas in the chamber to form a highly reactive and / or high-energy plasma by using a high-voltage alternating electric field generated by a radio frequency power supply. A chemical reaction and / or physical bombardment occurs ...

AI Technical Summary

Problems solved by technology

[0006] However, in practical applications, the pre-cleaning chamber adopts the method of periodically increasing the cooling steps to avoid excessive temperature of the substrate, which inevitably has the following problems: due to the increased cooling steps, the process time of the pre-cleaning process is longer. Long, resulting in low productivity and low economic benefits of semiconductor processing equipment; however, if the number of additional cooling steps is reduced, the temperature of the substrate may be higher, thereby affecting the process results and resulting in low product yield

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