Plasma Chambers for Improving Radial Uniformity of Plasma

Abstract

The invention discloses a plasma chamber for improving plasma radial uniformity. The plasma chamber for improving the plasma radial uniformity comprises a metal vacuum chamber, a plurality of quartz medium buckets which are coaxially arranged in sequence and different in diameters, the upper end of the quartz medium bucket at the topmost end is sealed, the quartz medium bucket at the lowest end is communicated with the metal vacuum chamber, two adjacent quartz medium buckets are communicated with each other, radio frequency coils are wound outside all the quartz medium buckets, shielding rooms are arranged outside all the quartz medium buckets and the radio frequency coils, every two adjacent quartz medium buckets are shielded and isolated from each other, air inlets are formed in all the quartz medium buckets, and air outlets are formed in the bottom of the metal vacuum chamber. The plasma chamber for improving the plasma radial uniformity disclosed by the invention can improve the plasma density in the center region in the chamber to enhance the plasma radial uniformity.

Description

technical field [0001] The invention relates to a reaction chamber, in particular to a radio frequency plasma reaction chamber applied to material surface modification and surface treatment. Background technique [0002] Radio frequency inductively coupled plasma discharge can generate chemically active atoms, molecular groups and ions, so it is widely used in the fields of material surface modification and surface treatment. For the global chip manufacturing process, plasma processing technology plays an extremely important role, especially in the VLSI manufacturing process, nearly one-third of the process is completed with the help of plasma processing technology. Such as plasma cleaning, plasma etching, plasma coating, plasma deglue and so on. In recent years, with the development of chip processing technology, in order to improve efficiency and save costs, the diameter of the etched wafer is getting larger and larger, so the diameter of the plasma process chamber is req...

AI Technical Summary

Problems solved by technology

However, as the diameter of the chamber increases, in the cylindrical coil RF inductively coupled plasma source, when the chamber diameter is large, such as 30cm and 45cm in diameter, it is difficult to ensure uniformity of the plasma density in the radial direction , especially the trend of density distribution with low center and high peripheral

The inhomogeneity of the plasma density will cause the wafers produced by this equipment to be waste products

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