Manufacturing method for transient voltage suppression diode, and transient voltage suppression diode
A technology of transient suppression and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as large circuit interference, low TVS reverse characteristics and reliability, and high-frequency circuit signal attenuation. , to achieve the effect of reducing interference, reducing device cost, and reducing parasitic capacitance
Active Publication Date: 2017-01-04
FOUNDER MICROELECTRONICS INT
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However, the equivalent circuit diagram of the current transient suppression diode (TVS) is as follows: figure 1 As shown: the input / output capacitance of this structure is equivalent to the capacitance of a Zener diode. The equivalent parasitic capacitance of this transient suppression diode (TVS) is still very large, and the interference to the circuit is still very large, and the high-frequency circuit The attenuation of the signal is very large, and the reverse characteristics and reliability of TVS are still very low
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[0028] In order to have a clearer understanding of the above objects, features and advantages of the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that, in the case of no conflict, the embodiments of the present application and the features in the embodiments can be combined with each other.
[0029] In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described here. Therefore, the protection scope of the present invention is not limited by the specific details disclosed below. EXAMPLE LIMITATIONS.
[0030] figure 2 A schematic flowchart of a manufacturing method of a TVS diode according to an embodiment of the present invention is shown.
[0031] like figure 2 As shown, a method for manufactu...
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The invention provides a manufacturing method for a transient voltage suppression diode, and the transient voltage suppression diode. The manufacturing method for the transient voltage suppression diode comprises the following steps of enabling a doped silicon layer to be grown on a substrate; etching multiple deep grooves in the doped silicon layer and the substrate, wherein the bottom of each of the multiple deep grooves is positioned in the substrate; enabling an oxide layer to be grown in each of the multiple deep grooves; performing ion implantation and / or diffusion between any two adjacent deep grooves of the multiple deep grooves to form a P type region or an N type region; and etching contact holes in the P type region or the N type region to prepare metal layers in the contact holes. By adoption of the technical scheme of the manufacturing method for the transient voltage suppression diode, the stray capacitance of the transient voltage suppression diode can be lowered; the interference of the transient voltage suppression diode to a circuit can be reduced; the attenuation of a high-frequency circuit signal is lowered; the reverse characteristic of the TVS (transient voltage suppression diode) is improved; and the reliability of a device is improved while the cost of the device is lowered.
Description
technical field [0001] The invention relates to the technical field of transient suppression diodes, in particular to a manufacturing method of a transient suppression diode and a transient suppression diode. Background technique [0002] Transient suppression diode (TVS) is a device used to protect sensitive semiconductors, a solid-state semiconductor device that protects sensitive semiconductors from transient voltage surge damage. It has a small clamping coefficient, small size, fast response, and leakage Due to the advantages of small current and high reliability, it has been widely used in voltage transient and surge protection. Electrostatic discharge (ESD) and other transient voltages that appear randomly in the form of voltage surges usually exist in various electronic devices, and semiconductor devices are increasingly miniaturized, high-density and multi-functional, making electronic devices more and more Susceptible to voltage surges that can even cause fatal inj...
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IPC IPC(8): H01L21/329H01L29/861
CPCH01L29/6609H01L29/861
Inventor 李理马万里赵圣哲
Owner FOUNDER MICROELECTRONICS INT