Piezoresistor material
A varistor, a general-type technology, applied in the direction of varistors, varistor cores, etc., to achieve the effects of high nonlinear coefficient, high voltage gradient, and low leakage current
Active Publication Date: 2017-01-11
张颖
View PDF5 Cites 1 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] However, with the development and progress of science and technology, especially the rapid development of large-scale intelligent circuits, the requirements for components, especially resistors, are getting higher and higher. The current varistors can no longer meet the needs of development. Resistors and resistive materials with high performance and high capacity have been extensively studied, and varistor materials and varistors are one of the important research directions
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0040] A varistor material consisting of the following parts by weight:
[0041]
Embodiment 2
[0043] A varistor material consisting of the following parts by weight:
[0044]
Embodiment 3
[0046] A varistor material consisting of the following parts by weight:
[0047]
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More
Abstract
The invention discloses a piezoresistor material. The piezoresistor material is prepared from the following raw materials in parts by weight: 98-100 parts of zinc oxide, 50-52 parts of yttria, 3-5 parts of titanium dioxide, 50-52 parts of ytterbia, 2-4 parts of stannic oxide, 1-3 parts of selenium oxide, 5-7 parts of strontium titanate, 2-4 parts of rhenium oxide, 2-4 parts of manganese carbonate, 6-8 parts of silicon dioxide, 4-6 parts of aluminum nitrate and 10-12 parts of rare earth sinter. Yttrium ions and ytterbium ions, with radii close to those of zinc ions, are introduced, so that a traditional formula with zinc oxide as the main component is replaced with a new formula with zinc oxide, yttria and ytterbia as main components. In combination with various additives in the new formula, the prepared piezoresistor material has higher nonlinear coefficients, lower leakage currents, higher heavy current resistance capacity and higher voltage gradient.
Description
Technical field [0001] The invention relates to the field of varistor materials, in particular to a varistor material with zinc oxide, yttrium oxide and ytterbium oxide as main components. Background technique [0002] Varistor is a resistance device with nonlinear volt-ampere characteristics. It is mainly used for voltage clamping when the circuit is subjected to overvoltage, and absorbs excess current to protect sensitive devices. The English name is "Voltage DependentResistor" abbreviated as "VDR", or "Varistor". The resistor body material of a varistor is a semiconductor, so it is a variety of semiconductor resistors. Varistor is a voltage-limiting protection device. Utilizing the non-linear characteristics of the varistor, when an overvoltage appears between the two poles of the varistor, the varistor can clamp the voltage to a relatively fixed voltage value, thereby realizing the protection of the subsequent circuit. The main parameters of varistor are: varistor voltage,...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More
IPC IPC(8): C04B35/453C04B35/622H01C7/112H01C7/115
CPCC04B35/453C04B35/622C04B2235/3224C04B2235/3225C04B2235/3227C04B2235/3232C04B2235/3236C04B2235/3262C04B2235/3268C04B2235/3293C04B2235/34C04B2235/3418C04B2235/443H01C7/112H01C7/115
Inventor 张颖
Owner 张颖
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Patsnap Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com