All-solid-state quantum dot sensitized solar cell and preparation method thereof

A technology for quantum dot sensitization and solar cells, which is applied in the field of preparation of all-solid-state quantum-dot-sensitized solar cells and all-solid-state quantum-dot-sensitized solar cells, can solve problems such as unstable performance and difficult packaging, and achieve low cost, Overcome the effects of unstable performance and simple preparation process

Active Publication Date: 2017-01-11
SHAANXI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide an all-solid-state quantum dot sensitized solar cell, which solves the problems of unstable performance and difficult packaging of the existing liquid quantum dot sensitized solar cell during use

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  • All-solid-state quantum dot sensitized solar cell and preparation method thereof

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preparation example Construction

[0042] A preparation method of an all-solid-state quantum dot sensitized solar cell of the present invention comprises the following steps:

[0043] Step 1, preparing ZnO nanowire arrays on conductive glass 2

[0044]Step 1.1, prepare the precursor solution of the ZnO seed layer, use the precursor solution of the ZnO seed layer on one side of the conductive glass 2, and prepare the ZnO seed layer by spin coating and heat treatment process, wherein the spin coating speed is 3000-4500r / min, the temperature of the heat treatment process is 300-350°C, and the thickness of the ZnO seed layer is 50-100nm;

[0045] The precursor solution of the ZnO seed layer is specifically: add 16.46g of zinc acetate to the mixed solution of 4.5ml of monoethanolamine (MEA) and 100ml of ethylene glycol methyl ether, then magnetically stir for 30min under 60°C hydrothermal conditions, and then in 30 Aging in a constant temperature box at ℃ for 24h;

[0046] Step 1.2, put the ZnO seed layer in step...

Embodiment 1

[0066] (1) Preparation of photoanode 5

[0067] Prepare the precursor solution of the ZnO seed layer: add 16.46g of zinc acetate to a mixed solution of 4.5ml of monoethanolamine (MEA) and 100ml of ethylene glycol methyl ether, then magnetically stir for 30min under water heat at 60°C, and then in 30°C Aged for 24 hours in a constant temperature box.

[0068] Prepare solution a: add KBH with a molar ratio of 1:1 to the methanol solution 4 Powder and SeO 2 Powder, heated and reduced to obtain solution a.

[0069] Use the precursor solution of ZnO seed layer on one side of conductive glass 2, prepare ZnO seed layer by spin coating method and heat treatment process, wherein spin coating speed is 3000r / min, the temperature of heat treatment process is 300 ℃, obtains the ZnO seed layer The thickness is 50nm; the ZnO seed layer is placed in NaOH and Zn(NO 3 ) 2 Mix the solution and grow ZnO nanowire arrays in a water bath at 80 °C; alternately immerse the ZnO nanowire arrays in ...

Embodiment 2

[0078] (1) Preparation of photoanode 5

[0079] Prepare the precursor solution of the ZnO seed layer: add 16.46g of zinc acetate to a mixed solution of 4.5ml of monoethanolamine (MEA) and 100ml of ethylene glycol methyl ether, then magnetically stir for 30min under water heat at 60°C, and then in 30°C Aged for 24 hours in a constant temperature box.

[0080] Prepare solution a: add KBH with a molar ratio of 1.2:1 to the methanol solution 4 Powder and SeO2 Powder, heated and reduced to obtain solution a.

[0081] Use the precursor solution of the ZnO seed layer on one side of the conductive glass 2 to prepare the ZnO seed layer by spin coating and heat treatment process, wherein the spin coating speed is 3800r / min, and the temperature of the heat treatment process is 320°C to obtain the thickness of the ZnO seed layer is 80nm; the ZnO seed layer is placed in the molar concentration ratio of 1:1 hexamethylenetetramine and Zn(NO 3 ) 2 Mix the solution and grow ZnO nanowire ar...

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Abstract

The invention discloses an all-solid-state quantum dot sensitized solar cell which comprises conductive glass and a copper substrate. The conductive glass is opposite to the copper substrate, the space between the conductive glass and the copper substrate is filled with solid electrolyte, a photo-anode is arranged on the conductive glass and positioned on one side of the solid electrolyte, a copper-based Cu2S nano-sheet counter electrode is arranged on the copper substrate and positioned on the other side of the solid electrolyte, and the photo-anode is a CdS/CdSe quantum dot sensitized ZnO nanowire array photo-anode. By synthesizing and heating the solid electrolyte with good conductivity, the microstructure gap between the ZnO nanowire array photo-anode and the copper-based Cu2S nano-sheet counter electrode is sufficiently filled with the solid electrolyte, the problems of unstable performance of a liquid quantum dot sensitized solar cell and electrolyte omission in the package process are solved, and the all-solid-state quantum dot sensitized solar cell is simple in preparation process, low in cost, good in large-area preparation repeatability and excellent in use value.

Description

technical field [0001] The invention belongs to the technical field of quantum dot-sensitized solar cells, in particular to an all-solid-state quantum-dot-sensitized solar cell, and also relates to a preparation method of an all-solid-state quantum-dot-sensitized solar cell. Background technique [0002] In recent years, with the continuous increase of people's demand for energy and the continuous reduction of fossil fuel reserves, it has become one of the important topics of current scientific research to find a new source of abundant, green and environmentally friendly energy. As an inexhaustible natural energy source, solar energy has attracted increasing attention from all over the world, especially the research on solar cells that directly convert solar energy into electrical energy has become a hot research topic at present. [0003] Quantum dot-sensitized solar cells (QDSSC) are the third-generation solar cells that appeared in the 1990s, which use narrow-bandgap inor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/20H01G9/00
CPCH01G9/0029H01G9/2009Y02E10/542Y02P70/50
Inventor 邓建平傅明星张鹏超方俊飞叶伟
Owner SHAANXI UNIV OF TECH
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