Graphene-phosphorus heterojunction photodetector and manufacturing method

A photodetector and graphene technology, applied in the field of optical communication, can solve the problems of limiting the photoelectric conversion efficiency of black phosphorus-based optoelectronic devices, black phosphorus erosion, instability, etc., and achieve improved optical responsivity, low cost, and fast response speed. Effect

Inactive Publication Date: 2017-01-11
鲍小志
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Problems solved by technology

However, black phosphorus is easily corroded by water and oxygen in the air, and its instability in the air has become an important bottleneck restricting its application.
In addition, the photoelectric conversion efficiency of black phosphorus-based optoelectronic devices is greatly limited due to the high contact resistance between black phosphorus and metal electrodes.

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  • Graphene-phosphorus heterojunction photodetector and manufacturing method
  • Graphene-phosphorus heterojunction photodetector and manufacturing method
  • Graphene-phosphorus heterojunction photodetector and manufacturing method

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Embodiment Construction

[0024] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0025] figure 1 It is a graphene-black phosphorus heterojunction photodetector described in a preferred embodiment of the present invention, comprising a silicon substrate 1, a silicon dioxide layer 2, and several black phosphorus layers 3 stacked in sequence from bottom to top And cover the graphene layer 4 on each black phosphorus layer 3; The area of ​​each black phosphorus layer 3 is less than the area of ​​silicon dioxide layer 2, and the graphene layer 4 covers each black phosphorus layer 3 completely so that in the black phosphorus layer 3 Black phosphorus has no part exposed to the air, and the graphene layer 4 extends to the exposed area where the silicon dioxide...

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Abstract

The invention discloses a graphene-phosphorus heterojunction photodetector and a manufacturing method, which belong to the technical field of optical communication. the graphene-phosphorus heterojunction photodetector comprises a silicon substrate, a silicon dioxide layer, a plurality of parallelly-arranged phosphorus layers and a graphene layer covering each phosphorus layer sequentially arranged from bottom to top in an overlapped mode, wherein the phosphorus in each phosphorus layer and the graphene in the graphene layer form a heterojunction; the graphene layer covers the phosphorus layer completely; an electrode is arranged above the edge of the graphene layer; and the electrode extends above the area where the phosphorus layer and the graphene layer are overlapped. In order to solve the above technical problem, very high photoelectric conversion efficiency in the optical communication band can be realized, the manufacturing method is simple, the cost is low, and the repeatability is good.

Description

technical field [0001] The invention belongs to the technical field of optical communication. Background technique [0002] Two-dimensional black phosphorus is an emerging two-dimensional material in recent years. Its energy bandgap is between the zero-bandgap graphene and the wide-bandgap transition metal sulfide, and the black phosphorus can be adjusted by changing the number of layers. energy band gap. Unlike other two-dimensional materials known so far, black phosphorus can maintain the characteristics of a direct band gap under any number of layers, thus ensuring that black phosphorus always has an effective photoelectric conversion capability. In addition, two-dimensional black phosphorus also has high carrier mobility. These characteristics make black phosphorus hope to make a breakthrough in the application of light detection in the visible light to optical communication band. However, black phosphorus is easily eroded by water and oxygen in the air, and its instab...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/02H01L31/109H01L31/0328H01L31/18
CPCH01L31/022408H01L31/0336H01L31/109H01L31/18Y02P70/50
Inventor 鲍小志
Owner 鲍小志
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