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808 nm semiconductor laser structure for green cursor line instrument

A semiconductor and laser technology, applied in the field of 808nm semiconductor laser structure, can solve the problems of poor wavelength stability of the pump source, achieve small threshold current, increase service time, and improve stability

Inactive Publication Date: 2017-01-18
Shandong Huaguang Optoelectronics Co. Ltd.
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Aiming at the problem of poor wavelength stability of the existing 808nm semiconductor laser as a pump source, the present invention provides a structure of an 808nm semiconductor laser used for a green liner

Method used

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  • 808 nm semiconductor laser structure for green cursor line instrument

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] A kind of 808nm semiconductor laser structure used in green light line instrument, such as figure 1 As shown, it includes a substrate 1, a lower cladding layer 2, an active region 3, a first upper cladding layer 4, a second upper cladding layer 5, a contact layer 6, a first metal electrode layer 8, and a first The second upper cladding layer 5 and the contact layer 6 form a ridge structure, and the part of the first upper cladding layer 4 that does not cover the second upper cladding layer 5, the side surfaces of the ridge structure, and the part of the contact layer 6 that does not cover the first metal electrode layer 8 Parts are respectively covered with a dielectric film 7 , a first metal electrode layer 8 is disposed above the dielectric film 7 , and a second metal electrode layer 9 is disposed below the substrate 1 .

[0037] The substrate 1 is a GaAs substrate with a 0 degree off-angle; the material of the lower cladding layer 2 is Al 0.6 Ga 0.4 As material; th...

Embodiment 2

[0043] A kind of 808nm semiconductor laser structure that is used for green liner as described in embodiment 1, and its difference is,

[0044] The substrate 1 is a GaAs substrate with an off-angle of 15 degrees; the material of the lower cladding layer 2 is (Al 0.4 Ga 0.6 ) 0.5 In 0.5 P; the material of the active region 3 is Ga 0.5 In 0.5 P, the material of the first upper cladding layer 4 is (Al 0.4 Ga 0.6 ) 0.5 In 0.5 P, the material of the second upper cladding layer 5 is (Al 0.4 Ga 0.6 ) 0.5 In 0.5 P, the contact layer 6 is heavily doped GaAs. The dielectric film 7 is SiO2 with a thickness of 200nm. The first metal electrode layer 8 is TiPtAu, and the second metal electrode layer 9 is GeNiAu.

[0045] The active region 3 has a thickness of 250 nm. The largest optical confinement factor and thus the smallest threshold current density can be obtained.

[0046] Ga 0.5 In 0.5 The refractive index of P is 3.35, (Al 0.4 Ga 0.6 ) 0.5 In 0.5 The refractive ...

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Abstract

The present invention relates to an 808 nm semiconductor laser structure for green cursor line instrument, and the structure comprises a substrate, a lower-cladding layer, an active region, a first upper cladding layer, a second upper cladding layer, a contact layer, and a first metal electrode layer. All are arranged from the bottom to the top in sequence. The second upper cladding layer and the contact layer form a ridge type structure; the part of the first upper cladding layer uncovering the second upper cladding layer, the side surface of the ridge type structure and the part of the contact layer uncovering the first metal electrode layer are covered respectively with a dielectric film. The first metal electrode layer is arranged above the dielectric film, and a second metal electrode layer is arranged under the substrate. According to the invention, it is possible to ensure that the semiconductor laser has the smallest threshold current while meeting the output power to a green cursor line instrument power. The work current under the same power is also reduced accordingly. This is of great help to the cursor line instrument using battery to provide current. And the service lifetime of a semiconductor laser can be lengthened while the power consumption of the battery is reduced and the use time is increased.

Description

technical field [0001] The invention relates to an 808nm semiconductor laser structure, which is especially suitable for the pumping source of a green liner and belongs to the technical field of semiconductor lasers. Background technique [0002] The laser line marking instrument is an instrument that uses a high-brightness laser to focus and expand the laser line to perform distance measurement, calibration and alignment. When in use, the laser line is projected on the object to generate a marking line, and the user can cut, align or otherwise use the object according to the marking line. The marking instrument is widely used in the cutting of steel plate, stone, wood, etc., the horizontal and vertical alignment of building decoration, machine vision and stage demonstration and other fields. It reduces the labor intensity of workers, enhances the cutting alignment accuracy, and thus greatly improves work efficiency. There are many kinds of colors of laser lines, mainly gr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/22G01C15/00
CPCG01C15/004H01S5/22
Inventor 朱振张新苏建徐现刚
Owner Shandong Huaguang Optoelectronics Co. Ltd.