A damage-free ultrasonic/megasonic cleaning device for patterned wafers

Abstract

The invention discloses a graphic wafer non-destructive ultrasonic / megapromatic cleaning device, wherein an ultrasonic / megapromatic running unit, a bottom quartz are arranged closely in the sealed shell cavity, the bottom quartz component comprises an annular quartz micro resonant cavity protection ring which is connected end to end, a quartz micro-reactor array is made ofvertical rod-like quartz structures and a bottom quartz sheet, whereinalower non-horizontal planar surface structure is arranged. The lower end of the bottom quartz extends from the lower bottom surface of the shell. The ultrasonic / megasonic energy from non-vertical directions of transmission and wafer surface can be selectively removed through quartz micro-resolution array, and theultrasonic / acoustic energy of the surface of the wafer can be evenly distributed through the dynamic change of the distance between the bottom quartz wafer and the surface of the wafer. By the adoption of the method, an even, no damaged cleaning effect can achieve within any area in the entire range of graphics in a certain cleaning time.

Description

technical field [0001] The invention relates to the field of processing and cleaning equipment for semiconductor integrated circuits, and more particularly relates to an ultrasonic / mega-sonic cleaning device for non-damaging cleaning of patterned wafers and improving cleaning uniformity. Background technique [0002] With the rapid development of semiconductor integrated circuit manufacturing technology, the graphic feature size of integrated circuit chips has entered the deep sub-micron stage, and the feature size of key contaminants (such as particles) that cause failure or damage to ultra-fine circuits on the chip has also changed. greatly reduced. [0003] During the production and processing process of integrated circuits, semiconductor wafers usually go through multiple process steps such as film deposition, etching, and polishing. And these process steps just become the important place that the contamination produces. In order to maintain the clean state of the wafe...

AI Technical Summary

Problems solved by technology

If the ultrasonic / megasonic energy obtained during the cleaning process is too little, the removal efficiency of particle pollutants in this area will be reduced. If the energy obtained is too much, it may cause damage to the pattern structure of the wafer surface in a local area

[0009] However, in the cleaning device disclosed in the above-mentioned Chinese invention patent application, the lower end bottom surfaces of all the quartz rods in the quartz rod array on the bottom surface of the device are flush.

If the bottom surface of the device is not perfectly parallel to the surface of the wafer, the distance between the two will vary greatly with position, resulting in uneven distribution of acoustic energy

For example, when the ultrasonic / megasonic cleaning device covers a fan-shaped area from the center to the edge of the wafer, the distance between the bottom surface of the device at the center of the wafer and the wafer may be small, and as the radius gradually increases, the distance between the bottom surface of the device and the wafer Gradually increasing problems, resulting in uneven distribution of acoustic energy

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