Gas distribution and diffusion plate and plasma processor

Abstract

The invention provides a gas distribution and diffusion plate. The gas distribution and diffusion plate comprises a temperature control device which is used for controlling the temperature of the gas distribution and diffusion plate to keep stable. The gas distribution and diffusion plate has the advantages that the probability that reaction gas entering a reaction chamber is adsorbed on the surface of the gas distribution and diffusion plate and a recombination rate of reaction gas atomic activity radicals and the surface of the gas distribution and diffusion plate can be kept stable through the stable surface temperature, and accordingly the gas distribution and diffusion plate is capable of keeping gas molecules and the atomic radicals in the reaction gas participating in wafer processing stable basically, the stability of a wafer processing technology is guaranteed and the wafer processing quality and performance are improved; the risk that depositions of side reaction products on the surface of the gas distribution and diffusion plate form solid particles and fall to the surfaces of processed wafers in technology processing can be reduced through the stable surface temperature, so that the product yield is increased. The invention further provides a plasma processor.

Description

technical field [0001] The invention relates to the field of semiconductor processing equipment, in particular to a gas distribution and diffusion plate and a plasma processor comprising the gas distribution and diffusion plate. Background technique [0002] In the process of using remote plasma to process wafers, reactive gas plasma is generated outside the reaction chamber. After the source is ejected, it passes through the gas distribution and diffusion plate, and the gas distribution and diffusion plate will distribute and diffuse the incoming gas plasma particles. The circle is processed. [0003] The reactive gas radicals (radicals) entering the reaction chamber will undergo adsorption and recombination reactions on the surface of the diffusion panel during the process of passing through the surface of the gas distribution diffusion plate, reducing the number of gas molecules reaching the wafer surface to participate in the process, especially the number of gas atom r...

AI Technical Summary

Problems solved by technology

However, during the whole process, the temperature of the surface of the gas distribution and diffusion plate is not stable, which causes the adsorption rate and recombination probability of the free radicals in the reactive gas plasma and the surface of the gas distribution and diffusion plate to change continuously throughout the process, As a result, the concentration of free radicals in the reactive gas plasma involved in wafer surface treatment continues to fluctuate throughout the process, leading to instability in the wafer processing process

Images