Preparation method of light absorption enhanced open-type silicon film spherical shell array substrate
A technology of array structure and silicon thin film, which is applied in the direction of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve the problems of low energy absorption efficiency, achieve the effect of enhancing energy absorption, improving absorption efficiency, and improving energy absorption
Inactive Publication Date: 2017-01-25
XI AN JIAOTONG UNIV
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Problems solved by technology
However, due to factors such as the dielectric constant and bandgap width of silicon, the energy absorption efficiency of pure nano-silicon films is very low for the band near the bandgap.
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[0033] In an embodiment, a method for preparing an open-type silicon thin-film spherical shell array structure with enhanced light absorption includes the following steps:
[0034] 1) Refer to figure 1 , firstly, an ITO glass slide with a thickness of 1 mm was used as the substrate 1, and was ultrasonically cleaned with acetone, ethanol and deionized water in sequence, blown dry with nitrogen and baked in an oven at 150°C for 1 h, and then coated on the surface of glass slide 1 Sputter aluminum layer 2 with a thickness of 250nm to 300nm; then prepare SiO2 nano-spherical particles with a diameter of D = 400±10nm, disperse SiO2 in n-butanol at a mass fraction of 15% after ultrasonic cleaning, and then ultrasonically disperse them evenly , take a small amount and drop it on the surface of the aqueous solution in the petri dish to form a continuous SiO2 single-layer film; finally transfer the particle film on the water surface to the surface of the aluminum layer 2 and dry it at 5...
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Abstract
The invention discloses a preparation method of a light absorption enhanced open-type silicon film spherical shell array substrate. The preparation method comprises the following steps: preparing a metal layer on the surface of a base material, preparing a tightly-arranged monolayer silicon dioxide nanometer particle array on the surface of the metal layer, then sedimentating silicon films on the particle array, preparing polymer layers on the surfaces of the silicon films, then using an acidic solution to dissolve the metal layer so that the silicon films are structurally separated from the base material, then using the polymer layers as substrates, selectively etching the silicon films on the surfaces of the silicon dioxide nanometer particles and partially exposing the silicon dioxide particle array, and finally using hydrofluoric acid to remove silicon dioxide particles so as to form the open-type silicon film spherical shell array substrate using the polymer layers as the substrates. According to the open-type silicon film spherical shell array substrate, great improvement of silicon film absorption efficiency can be realized.
Description
technical field [0001] The invention relates to the technical field of silicon thin film structures, in particular to a method for preparing an open silicon thin film spherical shell array structure with enhanced light absorption. Background technique [0002] In order to absorb energy in the visible light band to the greatest extent, most solar cells are still based on 180um-300um silicon base as the carrier, so the consumption of a large amount of silicon materials and its low energy absorption efficiency are still the shortcomings of the silicon solar energy industry. A possible fabrication method that can reduce material consumption and fabrication cost is to utilize nanoscale thin-film silicon as the absorber layer. However, due to factors such as the dielectric constant and bandgap width of silicon, the energy absorption efficiency of pure nano-silicon films in the band near the bandgap is very low. Therefore, if the absorption efficiency of solar energy in the long-w...
Claims
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Login to View More IPC IPC(8): H01L31/18
CPCH01L31/02363Y02P70/50
Inventor 李本强杨欢丁秋玉江新兵于伟
Owner XI AN JIAOTONG UNIV