White-light QLED (Quantum Dot Light Emitting Diode) device based on quantum dots with pre-set size and preparation method

A technology of predetermined size, quantum dots emitting light, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as color coordinate drift, achieve simple device structure, reduce loss, and improve white light color coordinate drift. Effect

Active Publication Date: 2017-01-25
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above deficiencies in the prior art, the purpose of the present invention is to provide a white light QLED device based on quantum dots of predetermined size and its preparation method, aiming to solve the problem that the existing quantum dot light-emitting layer adopts a three-primary-color stacked structure or a mixed structure, resulting in different light emission. Energy transfer between materials, the problem of color coordinate drift caused by different luminescent materials decaying with time

Method used

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  • White-light QLED (Quantum Dot Light Emitting Diode) device based on quantum dots with pre-set size and preparation method
  • White-light QLED (Quantum Dot Light Emitting Diode) device based on quantum dots with pre-set size and preparation method
  • White-light QLED (Quantum Dot Light Emitting Diode) device based on quantum dots with pre-set size and preparation method

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Effect test

Embodiment 1

[0046] In a white QLED device, the substrate is glass, the bottom electrode is 120nm ITO, and the hole injection layer is PEDOT:PSS (20nm). The hole transport layer is TFB, and the thickness of the hole transport layer is 45 nm. The quantum dot luminescent layer is a 3nm CdSe quantum dot with a thickness of 30nm. The electron transport layer is nano zinc oxide, and the thickness of the electron transport layer is 20nm. The top electrode is Al.

Embodiment 2

[0048] In a white QLED device, the substrate is glass, the bottom electrode is 120nm ITO, and the hole injection layer is PEDOT:PSS (20nm). The hole transport layer is TFB, and the thickness of the hole transport layer is 50 nm. The quantum dot luminescent layer is 2.5nm CdSeS quantum dots with a thickness of 25nm. The electron transport layer is nano zinc oxide, and the thickness of the electron transport layer is 25nm. The top electrode is Al.

Embodiment 3

[0050] In a white QLED device, the substrate is glass, the bottom electrode is 120nm ITO, and the hole injection layer is PEDOT:PSS (20nm). The hole transport layer is poly-TPD, and the thickness of the hole transport layer is 45nm. The quantum dot luminescent layer is 3nm CbS quantum dots with a thickness of 30nm. The ETL is nano zinc oxide, and the thickness of the electron transport layer is 20nm. The top electrode is Al.

[0051] To sum up, the present invention provides a white light QLED device based on predetermined size quantum dots and its preparation method. The present invention uses single size and single component predetermined size quantum dots as a white light emitting material. The white light QLED device prepared based on this technology not only avoids the color drift of the device over time caused by the difference of the three primary color light-emitting materials in the previous three-primary white light technology, including stacking and hybrid structu...

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Abstract

The invention discloses a white-light QLED (Quantum Dot Light Emitting Diode) device based on quantum dots with a pre-set size and a preparation method. The white-light QLED device comprises a substrate, a bottom electrode, a hole injection layer, a hole transmission layer, a quantum dot light emitting layer, an electron transmission layer and a top electrode, which are stacked in sequence from bottom to top, wherein the quantum dot light emitting layer is composed of the quantum dots with the pre-set size. The quantum dots with single size and single component are used as white-light light emitting materials. Based on the white-light QLED device prepared by the technology, a color drifting phenomenon of different devices along with utilization time, caused by different three-primary-color light emitting materials, in stacking and mixing structures of a previous three-primary-color white-light technology, is avoided, the structure of the device is simplified and the production cost is reduced; and meanwhile, energy transferring between the different light emitting materials is not caused, so that the light emitting efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of QLED white light devices, in particular to a white light QLED device based on quantum dots of predetermined size and a preparation method. Background technique [0002] Quantum dot light-emitting diodes have the characteristics of high color purity, thinness and flexibility, and are suitable for large-area coating process. They not only have good application prospects in display, but also have potential advantages in the field of lighting due to their low preparation cost. . [0003] There are two common methods for preparing white light diodes. One is to use the stacking of the three primary colors of RGB, that is to say, there are red, green and blue light-emitting layers in the same device, and the other is to use the doping ratio of red, green and blue light-emitting materials The difference is to obtain white light in the same light-emitting layer. However, these two aspects have their own disadvan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K71/00
Inventor 钱磊杨一行曹蔚然向超宇陈崧
Owner TCL CORPORATION
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