Oxide chemical vapor deposition apparatus and oxide chemical vapor deposition method

Abstract

The invention discloses an oxide chemical vapor deposition apparatus and an oxide chemical vapor deposition method. The oxide chemical vapor deposition apparatus mainly comprises a slide cylinder, a pressing ring, a slide cylinder installation ring, a base, a chamber outer wall, a heater, a center gas pipe, a heater installation seat, a reaction gas inlet, a reaction chamber flow channel, a bottom portion flow channel, a center gas inlet, a tail gas port, and a tail gas rectification hole. According to the present invention, through the central symmetrical design of the flow channel, the reaction gas flowing uniformity is ensured, and the deposition quality and the deposition uniformity are improved; and the protection gas is purged into the slide cylinder through the center gas pipe and a certain positive pressure difference with the reaction chamber flow channel is maintained, such that the gas of the reaction chamber flow channel is prevented from flowing into the slide cylinder, and the heater is protected from oxidation by the reaction gas.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to an oxide chemical vapor deposition device and method. Background technique [0002] The current chemical vapor deposition equipment is mainly used for the growth process of GaN and GaAs materials, and these processes are not in an oxidative atmosphere, and will not cause damage to the structural material of the equipment. II-VI group oxides such as ZnO are also mainly obtained through chemical vapor deposition equipment. ZnO, as a direct bandgap wide bandgap semiconductor material, is another popular research topic in the field of optoelectronic research after GaN, and has broad development. prospect. Since the process of ZnO material needs to use oxygen and grows at high temperature, how to prevent the components on the equipment from being oxidized at high temperature, resulting in shortened life or direct damage, is an urgent problem to be solved. ...

AI Technical Summary

Problems solved by technology

Since the process of ZnO material needs to use oxygen and grows at high temperature, how to prevent the components on the equipment from being oxidized at high temperature, resulting in shortened life or direct damage, is an urgent problem to be solved

[0003] Different from CVD epitaxial growth of other compounds, the oxide growth reaction chamber is an oxidizing atmosphere. Under ultra-high temperature (above 1100°C) growth conditions, the temperature of the furnace filament will exceed 1400°C, or even reach 1700°C, causing the furnace filament to quickly In addition, oxide impurities may be introduced. Once the impurities diffuse into the reaction gas atmosphere, harmful doping will be caused, resulting in a decrease in the quality of epitaxial materials.

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