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InGaN/GaN nano-pillar multiple quantum well grown on strontium tantalum lanthanum aluminate substrate and preparation method thereof

A technology of strontium aluminate tantalum lanthanum and multiple quantum wells, which is applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of chemical instability and other problems, and achieve the effects of easy acquisition, reduction of dislocation formation, and elimination of adverse effects

Active Publication Date: 2017-02-08
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But La 0.3 Sr 1.7 AlTaO 6 The chemical properties of the substrate are unstable at high temperature, so it is necessary to make La 0.3 Sr 1.7 AlTaO 6 On-substrate nanopillar LEDs can truly achieve large-scale applications, and there is an urgent need to find La 0.3 Sr 1.7 AlTaO 6 A new method and process for growing nanopillar LEDs on substrates

Method used

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  • InGaN/GaN nano-pillar multiple quantum well grown on strontium tantalum lanthanum aluminate substrate and preparation method thereof
  • InGaN/GaN nano-pillar multiple quantum well grown on strontium tantalum lanthanum aluminate substrate and preparation method thereof
  • InGaN/GaN nano-pillar multiple quantum well grown on strontium tantalum lanthanum aluminate substrate and preparation method thereof

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Embodiment 1

[0041] The preparation method of the InGaN / GaN nanocolumn multiple quantum well grown on the strontium tantalum lanthanum aluminate substrate of this embodiment comprises the following steps:

[0042] (1) Selection of the substrate and its crystal orientation: using La 0.3 Sr 1.7 AlTaO 6 The substrate, with the (111) plane offset from the (100) direction by 0.5-1° as the epitaxial plane, the crystal epitaxial orientation relationship is: the (0001) plane of GaN is parallel to the La 0.3 Sr 1.7 AlTaO 6 (111) side;

[0043] (2) Substrate surface polishing, cleaning and annealing treatment, the specific process of the annealing is: put the substrate into the annealing chamber, and treat La 0.3 Sr 1.7 AlTaO 6 The substrate was annealed for 3 hours and then air-cooled to room temperature;

[0044] The surface polishing of the substrate is specifically: firstly La 0.3 Sr 1.7 AlTaO 6 The surface of the substrate is polished with diamond slurry, and the surface of the subst...

Embodiment 2

[0055] The preparation method of the nanocolumn LED grown on the strontium tantalum lanthanum aluminate substrate of this embodiment comprises the following steps:

[0056] (1) Selection of the substrate and its crystal orientation: using La 0.3 Sr 1.7 AlTaO 6 The substrate, with the (111) plane offset from the (100) direction by 0.5-1° as the epitaxial plane, the crystal epitaxial orientation relationship is: the (0001) plane of GaN is parallel to the La 0.3 Sr 1.7 AlTaO 6 (111) side;

[0057] (2) Substrate surface polishing, cleaning and annealing treatment, the specific process of the annealing is: put the substrate into the annealing chamber, and treat La 0.3 Sr 1.7 AlTaO 6 The substrate was annealed for 5 hours and then air-cooled to room temperature;

[0058]The surface polishing of the substrate is specifically:

[0059] La 0.3 Sr 1.7 AlTaO 6 The surface of the substrate is polished with diamond slurry, and the surface of the substrate is observed with an op...

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Abstract

The invention belongs to the technical field of multiple quantum wells of nanometer arrays, and discloses an InGaN / GaN nano-pillar multiple quantum well grown on a strontium tantalum lanthanum aluminate substrate and a preparation method thereof. The InGaN / GaN nano-pillar multiple quantum well grown on a strontium tantalum lanthanum aluminate substrate comprises an AlN nucleation layer grown on a La<0.3> Sr<1.7>AlTaO<6> substrate, a GaN nano-pillar template grown on the AlN nucleation layer, an AlN / GaN super lattice layer grown on the nano-pillar template, and an InGaN / GaN nano-pillar multiple quantum well grown on the AlN / GaN super lattice layer. A nano-pillar array prepared is size-controllable and of uniform orientation. The obtained multiple quantum well has low defect density and excellent electrical and optical properties.

Description

technical field [0001] The invention relates to the field of multiple quantum wells and growth of nano-arrays, in particular to the field of growth on strontium aluminate tantalum lanthanum (La 0.3 Sr 1.7 AlTaO 6 ) nanocolumn multiple quantum wells on a substrate and a preparation method thereof. Background technique [0002] GaN and its related group III nitrides have excellent electrical, optical, and acoustic properties, and have been widely used in the preparation of light-emitting diodes (LEDs), laser diodes (LDs), and field-effect transistors. In recent years, GaN-based nanopillar LEDs have attracted much attention as a potential LED structure. Compared with planar LEDs, nanopillar LEDs have a high surface-to-volume ratio (area / volume), which can significantly reduce wear and tear. Dislocation density; secondly, nano-column LEDs can greatly improve the light-emitting efficiency of LEDs and realize light coupling and output; finally, by controlling the size of nano-c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02H01L33/06H01L33/12H01L33/00
CPCH01L33/007H01L33/02H01L33/06H01L33/12
Inventor 李国强杨美娟林云昊李媛
Owner SOUTH CHINA UNIV OF TECH
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