Preparation method of glass phase in electrical resistance slurry

A resistance paste, glass phase technology, applied in resistors, thick film resistors, non-adjustable metal resistors, etc., can solve the problems of high noise of thick film resistors and affecting the performance of electrical applications

Inactive Publication Date: 2017-02-15
安徽斯迈尔电子科技有限公司
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In actual electrical appliances, due to the movement of charges in series in the structure, the granular structu

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment 1

[0013] A method for preparing a glass phase in a resistance paste, comprising 30 parts by weight of silicon dioxide, 20 bismuth trioxide, 15 zinc oxide, 10 zirconium dioxide, and 10 boron oxide. The specific preparation steps are:

[0014] (1) Put silicon dioxide, bismuth trioxide, zinc oxide, zirconium dioxide and boron oxide into a three-dimensional swing mixer and mix for 3 times, each time for 30 minutes;

[0015] (2) Put the mixture in step (1) into a crucible, put it into an electric melting furnace for melting, set the melting temperature to 1300°C, take it out immediately after continuous melting for 3 hours, put it into water for water quenching;

[0016] (3) The mixture after water quenching in step (2) is preliminarily crushed with an impact crusher, and then placed in a pulverizer for secondary crushing, and then put into an air blowing flotation machine to remove impurities , and then put it into a ball mill and add water of the quality of the mixture to carry out...

specific Embodiment 2

[0019] A method for preparing a glass phase in a resistance paste, comprising 40 parts by weight of silicon dioxide, 30 bismuth trioxide, 20 zinc oxide, 15 zirconium dioxide and 15 boron oxide. The specific preparation steps are:

[0020] (1) Put silicon dioxide, bismuth trioxide, zinc oxide, zirconium dioxide and boron oxide into a three-dimensional swing mixer and mix for 5 times, 40 minutes each time;

[0021] (2) Put the mixture in step (1) into a crucible, put it into an electric melting furnace for melting, set the melting temperature at 1500°C, take it out immediately after continuous melting for 4 hours, put it into water for water quenching;

[0022] (3) The mixture after water quenching in step (2) is preliminarily crushed with an impact crusher, and then placed in a pulverizer for secondary crushing, and then put into an air blowing flotation machine to remove impurities , and then put it into a ball mill and add water of the quality of the mixture to carry out ball...

specific Embodiment 3

[0025] A method for preparing a glass phase in a resistance paste, comprising 35 parts by weight of silicon dioxide, 25 bismuth trioxide, 18 zinc oxide, 13 zirconium dioxide, and 13 boron oxide. The specific preparation steps are:

[0026] (1) Put silicon dioxide, bismuth trioxide, zinc oxide, zirconium dioxide, and boron oxide into a three-dimensional swing mixer and mix 4 times, each time for 35 minutes;

[0027] (2) Put the mixture in step (1) into a crucible, put it into an electric melting furnace for melting, set the melting temperature at 1400°C, take it out immediately after continuous melting for 3.5 hours, put it into water for water quenching;

[0028] (3) The mixture after water quenching in step (2) is preliminarily crushed with an impact crusher, and then placed in a pulverizer for secondary crushing, and then put into an air blowing flotation machine to remove impurities , and then put into a ball mill and add water of the quality of the mixture to carry out bal...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method of a glass phase in electrical resistance slurry, wherein the preparation method comprises the particular preparation steps: (1) placing silica, bismuth trioxide, zinc oxide, zirconium oxide and boron oxide in a three-dimensional swinging mixer, and mixing; (2) loading the mixture into a crucible, placing the crucible in an electric melting furnace, melting, then immediately taking out to put into water, and carrying out water quenching; (3) carrying out preliminary crushing of the mixture with an impact crusher, then placing the obtained powder into a pulverizer, carrying out secondary pulverization, then placing the obtained powder into a gas-blowing flotation machine, removing impurities, then placing into a ball mill, adding water, and carrying out ball milling; and (4) placing the mixture fine powder into a drier, drying, annealing after drying, then naturally cooling, to obtain a glass powder, adding the glass powder into the electrical resistance slurry, and mixing to obtain the glass phase. The preparation method has the beneficial effects that the glass powder particle size is finer and more uniform, and through the multi-step process, noise interference caused by the glass powder particles is greatly reduced.

Description

technical field [0001] The invention relates to the technical field of resistance paste preparation, in particular to a method for preparing a glass phase in resistance paste. Background technique [0002] Thick film resistors rely on the contact between particles in the glass matrix to form resistance, which has low cost and fast frequency response, and is widely used in non-precision electrical applications. The contacts in a thick film resistor form a complete resistance, but thermal strain in operation breaks the contacts. Due to parallel connection in most cases, thick film resistors will not open circuit, but the resistance value will continue to increase with time and temperature. [0003] In actual electrical appliances, due to the movement of charges in series in the structure, the granular structure will also cause high noise in the thick film resistor, which will affect the actual electrical application performance. Contents of the invention [0004] The objec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C03C12/00H01C7/00
CPCC03C12/00H01C7/003
Inventor 曹维常
Owner 安徽斯迈尔电子科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products