Steady state junction temperature prediction model of crimping IGBT module considering thermal coupling

Abstract

The invention belongs to the technical field of power electronics, and particularly relates to a parameter-adaptive steady state junction temperature prediction model of a high-power crimping IGBT module considering thermal coupling and a parameter extraction method thereof. In view of the problem that the mutual influence of heat generation of chips in a high-power-density crimping IGBT module and the double-face heat dissipation property thereof, based on the temperature field analysis and basic circuit theory of a three-dimensional model, a method for establishing a steady state equivalent thermal resistance network model considering thermal coupling and a heat sink of the crimping IGBT module is provided for predicting the junction temperatures of the chips. The parameters of the model provided by the invention are corrected according to different heat dissipation conditions, thereby being universal to different working conditions and heat sink flows, moreover thermal coupling influence factors are quantitatively analyzed by equivalent thermal coupling matrix elements corresponding to the model, and meanwhile a new idea is provided for model parameters provided by device manufacturers for users.

Description

technical field [0001] The invention belongs to the technical field of power electronics, and in particular relates to a pressure-connected IGBT module steady-state junction temperature prediction model considering thermal coupling. Background technique [0002] Voltage source converters based on insulated gate bipolar transistors (IGBTs) have been widely used in DC transmission systems. As the key equipment of energy conversion in DC transmission system, the voltage source converter is an important link that affects its operation safety and reliability. On the one hand, the junction temperature of the IGBT module affects the characteristics and life of the device. On the other hand, the thermal balance inside the module is of great significance to improve its use capacity and efficiency. However, its junction temperature is difficult to measure directly by experimental means. A generally accepted method is to establish its equivalent thermal circuit model, and realize rap...

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Problems solved by technology

However, at the same time, the compact arrangement of multiple chips makes the mutual heating effect between the chips in the module a problem that cannot be ignored compared to welding IGBT. The impact on the parameters of the IGBT equivalent thermal model has also become a new issue

However, the equivalent thermal circuit model established by the steady-state thermal resistance or transient thermal impedance curve of the IGBT or Diode chip independently tested in the traditional application manufacturer's data book cannot reflect the heating effect between the diode and the IGBT chip, and the estimate of the junction temperature is low; the traditional The method of extracting the equivalent thermal circuit model based on the finite element simulation temperature field analysis does not consider the influence of the radiator, the junction temperature error is large, and it cannot reflect the change of heat dissipation conditions in the actual project

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