Uniwafer cleaning machine table capable of enhancing cavity exhausting effect and used for exhausting apparatus

Abstract

The invention discloses a uniwafer cleaning machine table capable of enhancing a cavity exhausting effect and used for an exhausting apparatus. A rotary platform is arranged in a cavity for placing silicon wafers and driving the silicon wafers to rotate to be subjected to a cleaning process; the exhausting apparatus is arranged in the cavity; the exhausting apparatus comprises a first exhausting port and a second exhausting port which are formed in the bottom part and the side part of the cavity respectively; the second exhausting port is formed in a position which is not lower than the height of the surfaces of the silicon wafers; by additionally forming the exhausting port in the side part of the cavity, the exhausting effect of the cavity can be improved, so that impurity gases, such as acid gas, alkali gas, vapor and the like above the silicon wafers can be exhausted out of the exhausting port in the side part of the cavity as soon as possible, so as to reduce retention time of the impurity gases above the silicon wafers and the probability that the impurity gases fall into the surfaces of the silicon wafers to form defects; and therefore, the product quality is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, and more particularly, to a single-chip cleaning machine with an exhaust device that enhances the exhaust effect of a cavity. Background technique [0002] With the rapid development of semiconductor integrated circuit manufacturing technology, the graphic feature size of integrated circuit chips has entered the deep sub-micron stage, and the feature size of key contaminants that cause failure or damage to ultra-fine circuits on the chip has also been greatly reduced. . [0003] During the production and processing process of integrated circuits, semiconductor silicon wafers usually go through multiple process steps such as thin film deposition, etching, and polishing. These process steps have become important places for contamination generation. In order to keep the surface of the silicon wafer in a clean state and eliminate the contaminants deposited on the surface of the sil...

AI Technical Summary

Problems solved by technology

[0007] However, the cavity exhaust port 13 of the above-mentioned existing single-chip cleaning machine is designed at the bottom of the cavity 10. During the cleaning process, impurities such as acid gas, alkali gas and water vapor suspended above the silicon chip 12 need to be cleaned. Only by bypassing the space between the edge of the silicon wafer and the edge of the cavity can it enter the bottom of the cavity 10 and be discharged (as indicated by the arrow in the figure)

In this way, the impurity gas is prone to stay on the silicon wafer and cannot be discharged in time, which has a negative impact on the cleaning quality, and even the impurity particles in the gas will fall to the surface of the silicon wafer, resulting in serious consequences of secondary pollution and defects.

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