Cadmium telluride preparation method

A technology of cadmium telluride and cadmium telluride powder, which is applied in the direction of binary selenium/telluride compound, metal selenide/telluride, etc., can solve problems such as splashing, waste of cadmium telluride, and low product yield, and achieve equipment The effect of low requirements, high product yield and short process flow

Active Publication Date: 2017-03-15
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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Problems solved by technology

Authorized announcement patent CN103818886B discloses a preparation method of cadmium telluride. The method is to mix tellurium powder and cadmium powder homogeneously at a molar ratio of 1:1, place them in a graphite boat, and then put them into a synthesis furnace to exhaust the air. One synthesis is carried out in three stages of heating; the same patent CN103420346B discloses a preparation method of cadmium telluride, which is to mix tellurium powder and cadmium powder at a molar ratio of 1:1, place them in a graphite boat, and then put them into a synthetic In the quartz tube in the furnace, after the air is exhausted, the temperature is raised in three stages to carry out a synthesis; because the tellurium powder and the cadmium powder react violently, and even cause splashing, the cadmium telluride is wasted, and the product yield is low

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[0020] The present invention adopts following technical scheme: the preparation method of cadmium telluride, it comprises the following steps:

[0021] Step S1: homogeneously mix qualified tellurium powder, cadmium powder and cadmium telluride powder;

[0022] Step S2: Put the homogenized raw materials into the reaction container, then put the reaction container into the quartz tube in the atmosphere furnace, pass in the protective gas to discharge the air in the quartz tube, and then start to heat up at a rate of 5~20°C / min, heat up to 400~600°C, stop heating after holding for 0.5~3h;

[0023] Step S3: After the temperature is lower than 100°C, stop feeding the protective gas, and take out the furnace to obtain cadmium telluride;

[0024] In the step S1, the molar ratio of the tellurium powder and the cadmium powder is 1:1, and the mass of the cadmium telluride powder is 5-30% of the total weight of the tellurium powder and the cadmium powder.

[0025] The preparation meth...

Embodiment 1

[0030] Step S1: Take 2.000kg of tellurium powder, 1.762kg of cadmium powder, and 1kg of cadmium telluride powder and mix them, and place them on a homogenizer for homogeneous mixing for 1 hour. 5N.

[0031] Step S2: Put the above-mentioned homogeneously mixed raw materials into the graphite boat, then put them into the quartz tube in the atmosphere furnace, cover the quartz tube with a quartz cap with a frosted mouth, seal the interface, and pass nitrogen gas into the quartz tube inlet pipe to discharge the quartz The air in the tube has a flow rate of 2L / min. After keeping the intake air for 30min, it starts to heat up at a rate of 10°C / min, and the temperature rises to 400°C. After holding for 3h, stop heating and continue to pass nitrogen.

[0032] Step S3: Start to lower the temperature naturally. When the temperature is lower than 100° C., stop the nitrogen flow, and get cadmium telluride out of the furnace.

[0033] Step S4: the cadmium telluride is crushed and sieved t...

Embodiment 2

[0036] Step S1: Take 5.000kg of tellurium powder, 4.404kg of cadmium powder, and 2.8kg of cadmium telluride powder and mix them, place them on a homogenizer for homogeneous mixing for 2.5 hours, the particle size of the tellurium powder, cadmium powder, and cadmium telluride powder are all less than 150 μm, The purity is 5N.

[0037] Step S2: Put the above-mentioned homogeneously mixed raw materials into the graphite boat, then put them into the quartz tube in the atmosphere furnace, cover the quartz tube with a quartz cap with a frosted mouth, seal the interface, and put hydrogen into the quartz tube inlet pipe to discharge the quartz The air in the tube has a flow rate of 4L / min. After keeping the intake air for 20min, it starts to heat up at a rate of 15°C / min, and the temperature rises to 500°C. After holding for 1h, stop heating and continue to flow hydrogen.

[0038] Step S3: Step S3: Start to lower the temperature naturally. When the temperature is lower than 100° C., s...

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Abstract

The invention provides a cadmium telluride preparation method. Cadmium telluride powder is added into tellurium powder and cadmium powder, and the powder is homogeneously mixed and heated to synthesize cadmium telluride. Severity of cadmium telluride synthesis reaction is relieved, waste caused by attaching of materials to the inner wall of a reaction vessel and a quartz tube is avoided, reaction is sufficient, product yield is improved, and cadmium telluride products are easily stripped from the reaction vessel. Both the reaction vessel and the quartz tube can be recycled, high temperature and high pressure are omitted in reaction, requirements for equipment are low, the technical process is short, the product yield is high, output is high, and batch production can be realized.

Description

technical field [0001] The invention belongs to the field of material preparation, in particular to a preparation method of cadmium telluride. Background technique [0002] Cadmium telluride is a compound semiconductor material with an energy gap of 1.45eV and a direct energy gap, which is in the ideal solar cell energy gap range and has good photoelectric conversion efficiency. Cadmium telluride thin-film solar cells are low in manufacturing cost and high in efficiency, and are suitable for large-scale industrialization. They are also used to make infrared modulators, HgCdTe substrates, infrared window electroluminescence devices, photovoltaic cells, infrared detection, X-ray detection, etc. [0003] At present, there are various methods for synthesizing cadmium telluride, mainly by mixing tellurium powder and cadmium powder. Authorized announcement patent CN103818886B discloses a preparation method of cadmium telluride. The method is to mix tellurium powder and cadmium po...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04
CPCC01B19/007C01P2004/60C01P2006/80
Inventor 范文涛朱刘胡智向
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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