Ion forming container and ion source

A technology of ion and container, which is applied in the field of ion forming container and ion source, and can solve the problems of cathode enlargement and cathode short circuit.

Active Publication Date: 2017-03-15
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As the cathode is heated and a voltage is applied, electrons on the cathode escape, however, the escape of electrons causes the catho

Method used

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  • Ion forming container and ion source

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Embodiment Construction

[0021] The ion forming container and ion source of the present invention will be described in more detail below in conjunction with schematic diagrams, wherein preferred embodiments of the present invention are represented, and it should be understood that those skilled in the art can modify the present invention described herein while still implementing the present invention beneficial effect. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0022] The core idea of ​​the present invention is that the ion forming container provided includes: a container body, the container body includes a first side wall and a second side wall oppositely arranged; a first cathode, the first cathode is arranged on the first In the side wall, the first voltage is applied to the first cathode; for the second cathode, the second cathode is arranged in the first side wall and surrounds t...

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Abstract

The invention provides an ion forming container and an ion source. The ion forming container comprises a container body, a first cathode electrode and a second cathode electrode, wherein the container body comprises a first side wall and a second side wall which are oppositely arranged; the first cathode electrode is arranged in the first side wall, and first voltage is exerted onto the first cathode electrode; the second cathode electrode is arranged in the first side wall and surrounds the first cathode electrode, second voltage is exerted onto the second cathode electrode, and third voltage is exerted onto the container body; and the second cathode electrode is made of a tungsten lanthanum alloy material, the first voltage is smaller than the second voltage, and the second voltage is smaller than the third voltage. According to the ion forming container and the ion source, the second cathode electrode adopts the tungsten lanthanum alloy material, in the process of forming hot electrons, lanthanum metal enables the surface of the second cathode electrode to keep smooth, the surface of the second cathode electrode keeps smooth, the service life of the second cathode electrode is prolonged, and therefore the short circuit phenomenon, caused by expansion of the second cathode electrode, of the second cathode electrode and the container body is avoided, and the service life of the ion source is prolonged.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an ion forming container and an ion source. Background technique [0002] Ion beam thin film deposition and ion beam material modification are an important branch of material science. The research and promotion of ion beam technology has made great achievements. One of the signs is that ion implantation semiconductor doping has become a very large-scale integrated The key process of circuit microfabrication. Among them, the ion source is the key component to generate the required ions. [0003] In the prior art ion implantation machines, the required ions are formed by thermionic electron bombardment of the gas, and thermionic electrons and heat are brought by heating with high current on the cathode. As the cathode is heated and a voltage is applied, electrons on the cathode escape. However, the escape of electrons causes the cathode to become severely enla...

Claims

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Application Information

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IPC IPC(8): C23C14/48
Inventor 许飞
Owner SEMICON MFG INT (SHANGHAI) CORP
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