A method for preparing a circular micro-coaxial metal structure whose axial direction is parallel to the substrate
A metal structure and circular technology, which is applied in the field of preparation of circular micro-coaxial metal structures, can solve the problems of difficulty in further improving the integration of micro-devices, large roughness of micro-coaxial structures, and poor verticality of side walls.
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[0037] The invention provides a method for preparing a circular micro-coaxial metal structure whose axial direction is parallel to the base, comprising the following steps:
[0038] Coating a release layer on the surface of the substrate;
[0039] preparing a longitudinal circular micro-coaxial metal structure on the surface of the release layer to obtain a circular micro-coaxial metal structure whose axial direction is perpendicular to the substrate;
[0040] removing the release layer in the circular micro-coaxial metal structure whose axial direction is perpendicular to the substrate, separating the circular micro-coaxial metal structure from the substrate, and bonding the circular micro-coaxial metal structure to the substrate laterally to obtain an axial Circular micro-coaxial metallic structures parallel to the substrate.
[0041] In the present invention, a release layer is surface-coated on a substrate. In the present invention, the substrate is preferably a silicon ...
Embodiment 1
[0077] a) Prepare the metal seed layer: as figure 1 As shown in a to 1b, a polydimethylsiloxane (PDMS) film with a thickness of 50nm is coated on the silicon substrate as a release layer, a copper metal layer with a thickness of 50nm is vacuum sputtered on the release layer, and a copper metal layer is coated on the copper metal layer. Cover the positive photoresist with a thickness of 50nm; place the silicon substrate coated with the positive photoresist under the first mask plate and use a wavelength of 365nm for ultraviolet light exposure, and the first mask plate is made of glass material, A chrome-plated mask plate with a thickness of 3 mm, the first mask plate is engraved with a light-transmitting part (the light-transmitting part includes a central circle and a ring concentric with the circle, and the rest is the outer ring of the light-shielding part. There is a straight line segment on the circumference, wherein the diameter of the inner solid circle is 40 μm, the dia...
Embodiment 2
[0084] a) Prepare the metal seed layer: as figure 1 As shown in a to 1b, a polydimethylsiloxane film with a thickness of 30nm is coated on the silicon substrate as a release layer, a copper metal layer with a thickness of 30nm is vacuum sputtered on the release layer, and a 30nm thick film is coated on the copper metal layer The positive photoresist; the silicon substrate coated with the positive photoresist is placed under the first mask and exposed to ultraviolet light with a wavelength of 365nm. The first mask is made of glass and has a thickness of 3mm. A chrome-plated mask plate, the first mask plate is engraved with a light-transmitting part (the light-transmitting part includes a central circle and a ring concentric with the circle, and the rest is a light-shielding part. The outer circumference of the ring has A straight line segment, wherein the diameter of the inner solid circle is 80 μm, the diameter of the inner circle of the outer ring is 120 μm, the thickness of ...
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Abstract
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