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Double-junction single-photon avalanche diode and its fabrication method

A single-photon avalanche and diode technology, applied in the field of single-photon detection, can solve problems such as low photon detection efficiency, achieve high photon detection efficiency, improve absorption rate, and increase the effect of avalanche multiplication area

Active Publication Date: 2017-10-17
量敏传感技术(上海)有限公司
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  • Abstract
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AI Technical Summary

Problems solved by technology

[0003] The avalanche multiplication region of traditional single-photon avalanche photodiodes is composed of a planar junction, which can only have good detection sensitivity for a single wavelength
At present, only a few double-junction structures have relatively low photon detection efficiency.

Method used

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  • Double-junction single-photon avalanche diode and its fabrication method

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Embodiment Construction

[0018] The present invention will be further described below in conjunction with the accompanying drawings.

[0019] refer to figure 1 , a double-junction single-photon avalanche diode, including a cylindrical p-substrate layer 1, a p-well charge layer 2, an inversion deep n-well 4, an n-well charge layer 7, and a p+-type light absorption layer 9, and an annular p doping control region 3, n well layer 5, n+ type semiconductor layer 6, p-type semiconductor layer 8, p well layer 10, p+ type semiconductor layer 11, GND electrode 12, cathode electrode 13, anode electrode 14 and two Silicon oxide layer 15; p-substrate layer 1, p well charge layer 2, p doping control region 3, inversion deep n well 4, n well layer 5, n+ type semiconductor layer 6, n well charge layer 7, p- Type semiconductor layer 8, p+ type light absorbing layer 9, p well layer 10, p+ type semiconductor layer 11, GND electrode 12, cathode electrode 13, anode electrode 14 and silicon dioxide layer 15 are all arrang...

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Abstract

The invention discloses a double-junction single-photon avalanche diode and a production method thereof. Existing double-junction structures are low in photon detection efficiency. The method comprises the following steps: a p-well charge layer is formed by doping a p- substrate layer; the outer end of the p-well charge layer is doped with an inversion deep n-well; the inner end of the inversion deep n-well is doped with a control area; the outer end of the inversion deep n-well is doped with an n-well charge layer; the periphery of the n-well charge layer is doped with a p- type semiconductor layer; the outer end of the n-well charge layer is doped with a p+ type light absorption layer; an anodic electrode is placed at the outer end of the p+ type light absorption layer; the periphery of the p- type semiconductor layer is doped with an n-well layer and an n+ type semiconductor layer, and the n+ type semiconductor layer is doped into the n-well layer; a cathodic electrode is arranged at the outer end of the n+ type semiconductor layer; the outer end of the inversion deep n-well is doped with a p-well layer and a p+ type semiconductor layer, and the p+ type semiconductor layer is doped into the p-well layer; and a GND electrode is arranged at the outer end of the p+ type semiconductor layer. The double-junction single-photon avalanche diode provided by the invention has a tunable short-wave / long-wave detection function, and is higher in photon detection efficiency.

Description

technical field [0001] The invention belongs to the technical field of single-photon detection, and relates to a double-junction single-photon avalanche diode and a manufacturing method thereof. Background technique [0002] Single-photon detection technology is a very low-light detection and sensing technology, which has various application potentials in contemporary life, such as: bioluminescence, quantum communication, air pollution detection, radiation detection, astronomical research, high-sensitivity sensors etc. Single photon detectors mainly include photomultiplier tubes (PTMs), microchannel plates, superconducting nanowires, avalanche photodiodes (APDs), superconducting single photon detectors and superconducting edge sensors. In single-photon detection systems using single-photon avalanche photodiodes, photon detection efficiency (Photon Detection Efficiency, PDE) is a key factor to measure the single-photon detection capability of avalanche photodiodes. Therefor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/107H01L31/0352H01L31/18
CPCH01L31/035272H01L31/03529H01L31/107H01L31/1804Y02P70/50
Inventor 卫振奇张钰王伟
Owner 量敏传感技术(上海)有限公司
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