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Ultrathin membrane preparation, interface characterization and regulation and control integrated system and application method

An integrated system and ultra-thin film technology, applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problems of easy to be oxidized, equipment cannot be accurately characterized and controlled, and the number of film layers is too large to achieve The effect of miniaturization

Active Publication Date: 2017-04-05
致真精密仪器(青岛)有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, spintronics devices have a large number of thin film layers and are easily oxidized at room temperature and pressure. A single independent device cannot accurately characterize and control each interface while it is growing.

Method used

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  • Ultrathin membrane preparation, interface characterization and regulation and control integrated system and application method
  • Ultrathin membrane preparation, interface characterization and regulation and control integrated system and application method

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Embodiment Construction

[0049] Referring to the accompanying drawings, it is further described how the present invention realizes real-time, atomic-scale interface spin characterization and regulation. Accompanying drawing is schematic diagram. The size of each part of the equipment involved is not the actual size, the number of film layers and thickness, and the relative position of each component of the equipment are also not the actual value. Detailed exemplary embodiments are disclosed herein, and specific structural and functional details are merely illustrative for purposes of describing exemplary embodiments, therefore, the invention may be embodied in various alternative forms and should not be construed as intended. It is to be construed as being limited only to the example embodiments set forth herein, but to cover all changes, equivalents, and alternatives falling within the scope of the invention.

[0050] The instrument integration system involved in the present invention is as image ...

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Abstract

The invention belongs to the field of spinning electronic device preparation and characterization, and relates to an ultrathin membrane preparation, interface characterization and regulation and control integrated system and an application method. The integrated system mainly comprises multiple sets of multi-power magnetron sputtering equipment, an in-situ time resolution magneto-optic Kerr measuring instrument and multi-angle ion irradiation equipment, the above three sets of equipment are integrated through an ultrahigh vacuum interconnection device, and ultrathin multi-layer membrane preparation, interface characterization and regulation and control are carried out in sequence. Under the condition of not damaging the vacuum degree, the functions of high-precision ultrathin multi-layer membrane preparation, in-situ accurate characterization and interface real-time regulation and control of spinning electronic devices can be achieved, and the system can be used for studying the ultrathin multi-layer membrane based interface spin dependent effect and preparing ultrathin multi-layer membranes with specific magnetic characteristics.

Description

technical field [0001] The invention relates to an integrated system and application method of ultra-thin film preparation, interface characterization and regulation, which integrates ultra-thin magnetic multilayer film preparation, in-situ property characterization and interface regulation equipment into an ultra-high vacuum system, realizing the The ultra-thin magnetic film is prepared, in situ characterized and regulated under environmental conditions, so as to obtain a thin film structure with high quality and controllable properties, so that the device has excellent performance. It belongs to the field of spintronic device preparation and characterization. Background technique [0002] Integrated circuits based on microelectronics technology are the foundation of the information industry. However, the leakage current generated by the tunneling effect in semiconductors causes excessive power consumption and poor data stability of traditional microelectronic devices. Moor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/54C23C14/35
CPCC23C14/352C23C14/54
Inventor 赵巍胜赵晓璇林晓阳张博宇雷娜曹安妮
Owner 致真精密仪器(青岛)有限公司