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A Mixer Circuit of CMOS Complementary Structure

A mixer and circuit technology, applied in electrical components, modulation conversion balance devices, demodulation, etc., to achieve the effects of reducing power consumption, reducing requirements, and relieving design pressure

Inactive Publication Date: 2020-04-28
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because the tail current transistor needs to work in the triode region, a large AC local oscillator signal is required, which poses a challenge to the performance of the port isolation

Method used

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  • A Mixer Circuit of CMOS Complementary Structure
  • A Mixer Circuit of CMOS Complementary Structure
  • A Mixer Circuit of CMOS Complementary Structure

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Experimental program
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Embodiment Construction

[0030] In order to facilitate those skilled in the art to understand the technical content of the present invention, the content of the present invention will be further explained below in conjunction with the accompanying drawings.

[0031] Such as image 3 Shown is a mixer circuit diagram of a CMOS complementary structure of the present invention, including: a first transconductance input stage, a second transconductance input stage, a third transconductance input stage, a fourth transconductance input stage, a local oscillator pulse Shaping stage, first resistor, second resistor, third resistor, fourth resistor, ninth NMOS transistor, ninth PMOS transistor, tenth NMOS transistor, tenth PMOS transistor.

[0032] The first transconductance input stage, the second transconductance input stage, the third transconductance input stage, and the fourth transconductance input stage receive the RF voltage signal, and the RF voltage signal V RF+ or V RF- converted to a current signa...

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PUM

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Abstract

The invention discloses a mixer circuit of CMOS complementary structure, comprising: four transconductance input stages and a local oscillator pulse shaping stage; when V LO+ , V LO‑ When it is high or low, the first and second transconductance input stages receive V RF+ , V RF‑ Voltage signal, the differential RF voltage signal is amplified and passed to V IF+ , V IF‑ port; when V LO+ , V LO‑ After level flipping, the differential signal goes from V RF+ and V RF‑ The ports are respectively amplified by the fourth and third input transconductance stages and passed to V IF‑ , V IF+ port; the local oscillator pulse shaping stage shapes the single-ended sinusoidal local oscillator signal into a differential rectangular local oscillator signal, which equivalently reduces the power requirements for the sinusoidal local oscillator signal and eases the design pressure on the isolation of the local oscillator port; transconductance input The stage adopts CMOS complementary structure to achieve the effect of current multiplexing and reduce power consumption; and can obtain the second-order nonlinear compensation effect to reduce the influence of second-order interaction distortion.

Description

technical field [0001] The invention belongs to the field of radio frequency integrated circuits, in particular to a mixer circuit. Background technique [0002] The mixer is a key module in the RF receiver, because it completes the frequency conversion of RF-IF and directly determines the architecture of the receiver. In order to reduce the contribution of the mixer and the post-stage circuit noise to the system noise, and to compensate the loss of the IF filter, the mixer needs a certain conversion gain. [0003] Such as figure 1 As shown, the active mixer based on the Gilbert multiplier is widely used in the RF integrated front-end of various architectures due to its high mixing gain and superior port isolation. However, its noise figure is relatively high. The noise of the active mixer mainly comes from the flicker noise of the switching stage, the thermal noise and the thermal noise of the RF transconductance stage (TERROVITIS, M.T., MEYER, R.G. Noise in current comm...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03D7/14
CPCH03D7/1441
Inventor 郭本青陈俊许炜鹏李玥玥王耀金海焱
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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