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Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the field of semiconductor devices and their manufacturing, finned diodes and their manufacturing, can solve problems such as device failure, achieve reduced on-resistance, uniform distribution of impurities, and increase the area through which ESD current passes Effect

Active Publication Date: 2021-03-16
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Electro-Static Discharge (ESD) phenomenon is a serious problem for semiconductor devices, especially for FinFET devices, due to the smaller critical size of the device, the device is more likely to fail due to the ESD phenomenon

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0036] Various exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. It should be understood that the relative arrangements of components and steps, numerical expressions and values ​​set forth in these embodiments should not be construed as limiting the scope of the present invention unless specifically stated otherwise.

[0037]In addition, it should be understood that, for the convenience of description, the dimensions of the various components shown in the drawings are not necessarily drawn according to the actual scale relationship, for example, the thickness or width of some layers may be exaggerated relative to other layers.

[0038] The following description of the exemplary embodiments is illustrative only and is not intended to limit the invention and its application or use in any way.

[0039] Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discusse...

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Abstract

The invention discloses a semiconductor device and a manufacturing method thereof, and relates to the technical field of semiconductors. Wherein, the method includes: providing a substrate structure including a semiconductor substrate and a plurality of semiconductor fins on the substrate; forming an isolation region between the fins to at least substantially fill the space between the fins; At least a part of the bottom structure is first doped to form a well region at least partially in the substrate and adjoining or overlapping with some of the plurality of fins; removing a part of the isolation region to expose the plurality of fins performing second doping on at least a part of each of the fins of the plurality of fins in the first group of fins adjacent to or overlapping with the well region to form a first doped region; At least a part of each fin of the second group of fins in the plurality of fins that is different from the first group of fins is subjected to third doping to form a second doped region; the first doped region has the same The doped regions are of different, same conductivity type as the well region.

Description

technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a semiconductor device and a manufacturing method thereof, and more specifically, to a finned diode and a manufacturing method thereof. Background technique [0002] With the shrinking of critical dimensions of metal oxide semiconductor field effect transistors (Metal Oxide Semiconductor Field Effect Transistor, MOSFET), short channel effect (Short Channel Effect, SCE) has become a crucial issue. A Fin Field Effect Transistor (Fin Field Effect Transistor, FinFET) has good gate control capability and can effectively suppress short channel effects. Moreover, the FinFET reduces random dopant fluctuation (Random Dopant Fluctuation, RDF) of the device, and improves the stability of the device. Therefore, FinFET devices are usually used in the design of small-sized semiconductor elements. [0003] Electro-Static Discharge (ESD) phenomenon is a serious problem for semic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/329H01L21/8222H01L27/08H01L29/861
CPCH01L21/8222H01L27/0814H01L29/66121H01L29/8618H01L27/0255H01L21/823821H01L27/0924H01L21/823807H01L21/823878H01L21/823892H01L27/0248H01L27/0928H01L29/0653H01L29/1037
Inventor 周飞
Owner SEMICON MFG INT (SHANGHAI) CORP
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