Irradiation-reinforced SiC super-junction MOS structure

Abstract

The invention provides an irradiation-reinforced SiC super-junction MOS structure, which sequentially comprises the following parts from bottom to top: an N + drain region, wherein P columns and N columns are alternately arranged on the upper surface of the N + drain region; a left side P-base region, a right side P-base region, a left side N-source region and a right side N-source region that are located on the upper surface of the P-base 5; a left P column, a middle P column and a right P column that are connected into a whole in the chip and are connected with a left P-plus area and a right P-plus area; a gate oxide that is located in a partial region of the left side N-source region, a partial region of the right side N-source region, a partial region of the preset region of the left side P-base region, a partial region of the preset region of the right side P-base region and the upper surface of a part of N columns; and a polysilicon gate that is located between the gate oxide and an isolation oxide, wherein the gate oxide is located at the uppermost end. The invention has the advantages of being high in radiation resistance, low in gate-drain capacitance, low in switching loss and high in short-circuit capacity.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a radiation-strengthened SiC superjunction MOS structure. Background technique [0002] The proposal of the superjunction structure effectively improves the compromise between the breakdown voltage and on-resistance of MOS devices. It uses P-type and N-type semiconductor materials to alternate with each other, which can make the electric field distribution more uniform when the device is off, thereby effectively improving the performance of the device. The withstand voltage, so low-resistance epitaxial wafers can be used to achieve lower on-resistance requirements. For SiC super junction MOS, it has all the advantages of SiC devices at the same time, so it is the most promising power semiconductor device in the future. However, when applied in environments such as single particle irradiation, it is still affected by the radiation effect, which seriously affects its applic...

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Problems solved by technology

However, it is still affected by the radiation effect when applied in environments such as single particle irradiation, which seriously affects its application in the aerospace field.

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