Phase change material layer, phase change memory unit and preparation method thereof
A phase-change memory and phase-change material technology, which is applied in the field of semiconductor material preparation, can solve the problems of slow phase change and short life of storage devices, and achieve good adhesion, prolong life, and improve thermal stability.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0061] see figure 1 , the present invention provides a phase change material layer 1, the phase change material layer 1 includes Ti x Te 1-x layer 11 and located on the Ti x Te 1-x The Sb layer 12 on the surface of the layer 11, wherein 0.33≤x≤0.56.
[0062] As an example, the Ti x Te 1-x The thickness of the layer 11 is 1 nm to 10 nm, and the thickness of the Sb layer 12 is 1 nm to 10 nm; preferably, in this embodiment, the Ti x Te 1-x Layer 11 has a thickness of 3 nm and said Sb layer 12 has a thickness of 8 nm.
[0063] As an example, the phase change material layer 1 includes a plurality of Ti x Te 1-x layer 11 and a plurality of the Sb layers 12, the Ti x Te 1-x Layer 11 and the Sb layer 12 are alternately stacked to form a phase-change superlattice film structure, and the bottom layer of the phase-change material layer 1 is the Ti x Te 1-x Layer 11.
[0064] As an example, the Ti x Te 1-x The layer 11 and the Sb layer 12 are alternately stacked for 3-25 p...
Embodiment 2
[0068] see figure 2 and image 3 , the present invention also provides a phase-change memory cell, the phase-change memory cell at least includes the phase-change material layer 1 as described in Embodiment 1, that is, the phase-change material layer 1 in this embodiment is the implementation The phase change material layer 1 described in Example 1.
[0069] As an example, the phase change memory unit further includes: a growth substrate 2, a lower electrode 3, a dielectric coating layer 4, and an upper electrode 5; the lower electrode 3 is located in the growth substrate 2 and runs through the growth Substrate 2; the phase-change material layer 1 is located on the surface of the growth substrate 2 and directly above the lower electrode 3; the upper electrode 5 is located on the surface of the phase-change material layer 1; the dielectric coating Layer 4 is located on the surface of the growth substrate 2 and covers the periphery of the phase change material layer 1 and the...
Embodiment 3
[0082] Please combine Figure 6 refer to Figure 7 to Figure 9 , taking the preparation method of a phase-change memory cell with a restricted structure as an example, the preparation method includes the following steps:
[0083] S1: providing a growth substrate 2, wherein a lower electrode 3 is formed in the growth substrate 2, and the lower electrode 3 penetrates the growth substrate 2;
[0084] S2: forming the dielectric cladding layer 4 on the surface of the growth substrate 2;
[0085] S3: forming a first deposition hole 41 in the dielectric coating layer 4, the first deposition hole 41 exposing the lower electrode 3;
[0086] S4: sequentially forming the phase change material layer 1 and the upper electrode 5 in the first deposition hole 41 .
[0087] In step S1, see Figure 7 , providing a growth substrate 2 , a lower electrode 3 is formed in the growth substrate 2 , and the lower electrode 3 penetrates through the growth substrate 2 .
[0088] As an example, the g...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com