Seed chuck and ingot growing apparatus including same

A technology of growth device and crystal seed, which is applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of deteriorating the quality of crystal ingots, etc., and achieves the advantages of improving thermal insulation performance, reducing heater power and improving reliability. Effect

Inactive Publication Date: 2017-05-10
LG SILTRON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This thermal shock causes shear stress, dislocation occurs at the portion where the seed crystal contacts the molten silicon, and thus can deteriorate the quality of the ingot

Method used

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  • Seed chuck and ingot growing apparatus including same
  • Seed chuck and ingot growing apparatus including same
  • Seed chuck and ingot growing apparatus including same

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Embodiment Construction

[0041] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the scope of the embodiments of the embodiments of the present invention can be determined from the matters disclosed in the embodiments, and the spirit of the present invention possessed by the embodiments includes actual modifications (such as addition, deletion, modification, etc.) Wait).

[0042] figure 1 is a view showing the ingot growing apparatus according to the embodiment.

[0043] refer to figure 1 , the crystal ingot growth apparatus 1 may comprise a chamber 10, configured inside the chamber 10 and configured to accommodate hot zone structures 30 and 31 of silicon, configured to heat the heater 35 of the hot zone structures 30 and 31, located in the hot zone structure 30 Outer insulator 60 outside of and 31, upper insulator 50 positioned above hot zone structures 30 and 31 and having holes h through which ingots pass, and an ...

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Abstract

The present invention relates to a seed chuck accommodating seed crystals so as to grow ingots in molten silicon, comprising: a neck cover for blocking thermal emission in the upward direction of the molten silicon; and a fixing part arranged on a bottom surface of the neck cover and accommodating the seed crystals, wherein the neck cover comprises: a top surface connected to a lifting cable; the bottom surface; and a circumferential surface connecting the top surface and the bottom surface, the circumferential surface is formed with an inclination angle with respect to the bottom surface, and a measurement part for measuring the molten silicon is opened in the neck cover such that the neck cover is positioned on the hole of an upper insulator so as to minimize heat loss through the hole of the upper insulator during a melting step and does not interfere in the temperature measurement of the molten silicon, thereby helping the temperature measurement of the molten silicon and increasing the reliability of molten silicon temperature sensing.

Description

technical field [0001] The present invention relates to a seed crystal chuck for manufacturing a silicon crystal ingot and a crystal ingot growing device comprising the same. Background technique [0002] A silicon wafer is manufactured using a silicon single crystal ingot grown by a Czochralski (CZ) process (hereinafter referred to as a CZ process) according to a large scale diameter of a silicon wafer used for producing a semiconductor device. [0003] In the CZ process, polysilicon is put into a quartz crucible, the quartz crucible is heated by a graphite crucible to melt the polysilicon, the seed crystal is brought into contact with the molten silicon, the seed crystal is rotated and lifted so that crystallization occurs at the interface between them, And a silicon single crystal ingot having a desired diameter can be grown. [0004] When growing an ingot during the CZ process, heat is exhausted to the upper side of the quartz crucible. When the exhausted heat is too m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/32C30B29/06C30B15/20
CPCC30B15/20C30B15/32C30B29/06C30B15/10C30B15/14
Inventor 姜钟珉卢台植
Owner LG SILTRON
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