Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Preparation method of InP quantum dots and InP quantum dots

A technology of quantum dots and ligands, which is applied in the field of semiconductor nanomaterial preparation, can solve the problems that limit the application of InP quantum dots, and achieve the effect of low cost and simple operation

Active Publication Date: 2017-05-24
SUZHOU XINGSHUO NANOTECH CO LTD
View PDF3 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These problems limit the application of InP quantum dots to a large extent.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of InP quantum dots and InP quantum dots
  • Preparation method of InP quantum dots and InP quantum dots
  • Preparation method of InP quantum dots and InP quantum dots

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0025] According to a preferred embodiment of the present invention, the indium-first ligand solution and the indium-second ligand solution are obtained by adding the indium precursor to a non-coordinating solvent containing the first ligand or the second ligand of. According to different experimental schemes, when adding the indium-second ligand solution to the mixed system, the indium-second ligand solution can be the same as the indium-first ligand solution, or can be mixed with the indium-first ligand solution. The solutions are not the same.

[0026] According to a preferred embodiment of the present invention, when preparing the indium-first ligand solution or the indium-second ligand solution, the ratio of the amount of the indium precursor to the first ligand or the second ligand is controlled Within the range of 1:0.5-1:4.

[0027] In the present invention, the indium precursor includes at least one of indium acetate, indium chloride, indium carbonate, indium iodide...

specific Embodiment approach

[0031]According to a preferred embodiment of the present invention, add indium-second ligand solution or pH 3 Finally, keep the reaction for 1-120 minutes respectively, more preferably, keep the reaction for 5-30 minutes. Through this period of time, the reaction can fully proceed, the particle size of the nanocrystals becomes more uniform, and the defects on the surface gradually decrease. It should be noted that, similar to the above experimental steps, the pH 3 It is added to the mixing system in the form of gas or gas solution. According to a specific embodiment of the present invention, add indium-second ligand solution to the InP nanocrystal core with smaller particle size, react for 5-30 minutes, and then add pH 3 Gas solution, react for 5-30 minutes. According to another specific embodiment of the present invention, add the indium-first ligand solution to the InP nanocrystal core with a smaller particle size, react for 5-30 minutes, and then pass into the pH 3 Gas,...

Embodiment 1

[0048] InP quantum dots with an emission peak of 666nm were prepared. Specific steps are as follows:

[0049] 1. Preparation of indium myristate (In-MA): Add 3 g of indium acetate, 5 g of myristic acid and 50 mL of 1-octadecene in a three-necked flask, feed nitrogen and heat to dissolve, and keep the reaction for 30 minutes. A clear and transparent solution of In-MA with a concentration of 0.2M was obtained;

[0050] 2. Preparation of zinc oleate (Zn-OA): add 5g of zinc acetate, 20mL of acetic acid and 30mL of 1-octadecene into a three-necked flask, feed nitrogen and heat to dissolve, keep the reaction for 30 minutes, and obtain a concentration of 0.5M Zn-OA clear transparent solution;

[0051] 3. Preparation of InP quantum dots: Add 300mg of indium acetate, 100mg of zinc acetate, 700mg of myristic acid and 10mL of 1-octadecene into a three-necked flask, pass in nitrogen gas and heat until dissolved, keep the reaction for 60 minutes, and obtain clarification Clear solution....

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a preparation method of InP quantum dots. The preparation method comprises the following steps that (a) an indium precursor is added to a non-coordinating solvent containing a first ligand to form a uniform indium-first ligand solution; (b) the indium-first ligand solution is heated to reach 180-260 DEG C, and PH3 is added to obtain a mixed system containing smaller-particle-size InP crystal nuclei; (c) the indium-first ligand solution and the PH3 are sequentially and alternatively added to the mixed system to obtain larger-particle-size InP crystal nuclei; (d) a precursor substance required by a shell layer for quantum dot synthesis is added to obtain the shell layer coated InP quantum dots. The method uses PH3 as a phosphorus source, growth of the quantum dots becomes uniform by adopting the method for alternatively adding the raw materials, and the larger-particle-size InP quantum dots are more easily to prepare.

Description

technical field [0001] The invention relates to the technical field of semiconductor nanomaterial preparation, in particular to a method for preparing InP quantum dots and the InP quantum dots. Background technique [0002] Quantum dots, also known as fluorescent semiconductor nanocrystals, are inorganic semiconductor luminescent nanocrystals with a physical diameter in the range of 1-20nm, which have obvious quantum size effects and unique optical properties. In recent years, due to its wide excitation wavelength range, narrow emission peak, large Slox shift, controllable particle size, and strong photochemical stability, quantum dots have been widely used in lighting, display and other fields, and have gradually become a class of A promising material for light-emitting diodes (LEDs), lasers, solar cells, and more. [0003] At present, the research on quantum dots is mainly aimed at quantum dots of II-VI group element compounds. Their preparation process is relatively sim...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C09K11/70C09K11/02C09K11/88
CPCC09K11/025C09K11/703C09K11/883
Inventor 张卫张超王允军
Owner SUZHOU XINGSHUO NANOTECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com