A method for manufacturing high-quality factor inductors for passive devices
A passive device and manufacturing method technology, applied in the direction of electric solid device, semiconductor device, semiconductor/solid device components, etc., can solve the problems of large contact area between inductance and substrate, low inductance quality factor, etc. Reduced impact and stable performance
Active Publication Date: 2018-07-06
CHENGDU HIWAFER SEMICON CO LTD
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[0005] The purpose of the present invention is to provide a method for manufacturing high-quality factor inductors of passive devices, which can well solve the problem that the large contact area between the inductor and the substrate leads to a decrease in the quality factor of the inductor
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[0020] In order to make the purpose, technical solution and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. For simplicity, some technical features known to those skilled in the art are omitted from the following description.
[0021] Provide a method for manufacturing high-quality factor inductors for passive devices, such as figure 1 shown, including the following steps:
[0022] The material of the substrate 1 includes but not limited to GaAs, SiC, GaN, Si, and the thickness is 50 μm~2 mm.
[0023] S1. Etching the substrate 1 to define the pier 2 of the air bridge;
[0024] The substrate 1 is etched by photolithography or dry etching. The specific method of photolithography is as follows: Spin-coat a layer of first photoresist on the substrate 1, and use the first photolithography plate for making air bridges on the substrate 1. A numbe...
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Abstract
The invention provides a production method of a high-quality factor inductor for a passive device. The production method comprises the following steps: (S1) etching a substrate, and defining a pier of an air bridge; (S2) growing an SiN isolating layer on the etched substrate; (S3) spinning the SiN isolating layer with second photoresist, and defining a bridge of the air bridge in a photoetching manner; (S4) depositing a plating layer on each of the substrate, the pier and the bridge; (S5) spinning the plating layer with third photoresist, and defining an induction region in a photoetching manner; (S6) plating a layer of Au in the induction region, so as to form a metal layer; and (S7) removing the third photoresist, the plating layer and the bridge, so as to obtain an air bridge inductor. According to the production method, a groove is formed in the substrate in an etching manner by virtue of an MEMS deep etching process, and the inductor is produced on the groove by virtue of the air bridge, so that the distance from the inductor to the substrate is increased, the influence caused by the substrate to the inductor is reduced, and a Q value of the inductor is increased.
Description
technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a method for manufacturing an inductance with a high quality factor of a passive device. Background technique [0002] GaAs is the most important and widely used semiconductor material among III-V compound semiconductors. The electron mobility in GaAs is 6 times that of silicon, and its electron peak drift speed is twice that of silicon. Therefore, GaAs devices have the characteristics of high frequency, high speed, low power consumption, low noise, and monolithic integration. As people's demand for high-frequency electronic devices is becoming more and more urgent, improving and improving the high-frequency performance of passive devices, especially inductors, has become the research focus of scholars at home and abroad. At the same time, due to the high integration and low-cost development requirements of large-scale integrated circuits, on-chip...
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IPC IPC(8): B81C1/00H01L23/64
Inventor 陈一峰
Owner CHENGDU HIWAFER SEMICON CO LTD