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Preparation method for graphene material and preparation method for component

A graphene and the same technology, applied in the field of graphene material preparation method and device preparation, can solve the problems of reduced conductivity, danger, high corrosion, etc., and achieve the effects of environmental protection, damage avoidance and high reaction energy in the reaction process

Active Publication Date: 2017-05-31
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But in this method, need to use reducing agent (such as hydrazine etc.) to be used for the deoxygenation reaction of graphene oxide, wherein the great majority of these reducing agents are dangerous because of highly corrosive, explosive, human body toxicity etc., and the prepared The graphene may include impurities, etc., so that the electrical conductivity may decrease

Method used

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Examples

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preparation example Construction

[0026] A method for preparing a graphene material, comprising:

[0027] Put carbon-containing compound materials in a high-vacuum environment;

[0028] Two laser beams with different wavelengths are used to irradiate the same area of ​​the carbon-containing compound material.

[0029] Further, the irradiating the same area of ​​the carbon-containing compound material with two laser beams of different wavelengths includes:

[0030] The first beam of high-energy laser irradiates the surface of the carbon-containing compound material, breaking its chemical bonds, and forming carbon ions and other ions on the surface;

[0031] vaporizing said other ions, said carbon ions remaining on the surface of said carbon-containing compound material;

[0032] The carbon ions remaining on the surface of the carbon-containing compound material are reorganized on the surface of the carbon-containing compound material to form graphene under the irradiation of the second beam of high-energy las...

example 1

[0040] Example 1: Preparation of graphene materials and devices by irradiating SiC with two laser beams

[0041] Preparation of carbonaceous compound materials, such as SiC, proper surface treatment and cleaning

[0042] Put SiC into a high vacuum 1.333×10^-1~1.333×10^-6Pa cavity to keep high vacuum

[0043] Use two laser beams, infrared wavelength 1063nm and ultraviolet 266nm to irradiate SiC to form the required graphene on its surface.

[0044] Move SiC to different positions for irradiation to form graphene graphs.

[0045] The purpose of the present invention is to provide a practical graphene material and device preparation method, to solve the performance and size requirements of the current graphene material preparation can not meet the requirements of electronic devices, while the present invention also provides a direct preparation of graphene A technical approach to devices that can simplify the photolithography process required to fabricate graphene devices, ther...

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Abstract

The invention belongs to the technical field of materials and discloses a preparation method for a graphene material. The method comprises the following steps: placing a carbon-containing compound material into a high-vacuum environment, and then adopting two beams of laser lights in different wavelengths for irradiating a same area of the carbon-containing compound material. The preparation and transferring processes of the method provided by the invention are simple; compared with common methods for preparing graphene (such as, a mechanical stripping method, an ultrasonic liquid-phase stripping method and an electrochemical stripping method), the method provided by the invention has the advantages that the transferring process after the graphene growth can be avoided and the damage to the graphene in the transferring process can be avoided; the method can be used for directly preparing a graphene device; the photolithography technique required by the preparation of the graphene device can be simplified, so that the cost can be lowered.

Description

technical field [0001] The invention relates to the field of material technology, in particular to a method for preparing a graphene material and a method for preparing a device. Background technique [0002] Graphene is a material in which carbon atoms of graphite, which is a three-dimensional structural carbon allotrope naturally occurring in nature, are arranged in a hexagonal planar structure in the form of a two-dimensional sheet. Carbon atoms of graphene form SP 2 bonds, and has the form of a planar sheet with a thickness of one atom. [0003] Graphene has remarkably excellent electrical and thermal conductivity, and physical properties (such as excellent mechanical strength, softness, elasticity, quantized transparency depending on thickness, high specific surface area, etc.) specific bonding structure to explain. Three of the four peripheral electrons of the carbon that make up graphene form sp 2 The hybrid orbital thus has a σ bond, while the remaining one elect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/184
Inventor 夏洋
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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