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Polycrystalline silicon crystallization process

A technology of polysilicon and crystallization, which is applied in the direction of polycrystalline material growth, crystal growth, chemical instruments and methods, etc., can solve the problems of slow crystallization speed of polycrystalline silicon ingots, differences in performance of solar cells, unstable crystallization speed of liquid silicon, etc., and achieve production High efficiency, stable crystallization speed, and improved crystallization stability

Inactive Publication Date: 2017-05-31
ANHUI ELECTRIC GRP SHARES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the overall temperature of liquid silicon in the ingot furnace is high and there is more latent heat, the crystallization speed of polycrystalline silicon ingots is slow, and there is a phenomenon of melting again after receiving an alarm.
At the same time, due to the inconsistent latent heat contained in liquid silicon in each ingot furnace, the crystallization speed of liquid silicon is unstable and the crystallization stability is poor, resulting in differences in the performance of solar cells made of polycrystalline silicon ingots

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] A polysilicon crystallization process, comprising: when the silicon material in the ingot furnace is in the state of coexistence of solid silicon and liquid silicon, maintaining the temperature at the top of the ingot furnace, and after the solid silicon is completely melted, heat the crystal at 5-10°C The temperature is gradually reduced to room temperature at a rate of 1 / min, so that the liquid silicon is crystallized again to form a polysilicon ingot, crushed to 60 mesh, pickled, washed and then dried to obtain the product polysilicon.

[0019] Wherein, the acid in the pickling operation process is a mixture of hydrofluoric acid with a mass fraction of 2% and hydrochloric acid with a mass fraction of 5%, and the mass fraction of hydrofluoric acid with 2% and hydrochloric acid with a mass fraction of 5% The volume ratio is 1:1.5.

[0020] Wherein, the pickling operation is to atomize the acid and then spray it on the polysilicon to be treated.

[0021] Wherein, the d...

Embodiment 2

[0024] A polysilicon crystallization process, comprising: when the silicon material in the ingot furnace is in the state of coexistence of solid silicon and liquid silicon, maintaining the temperature at the top of the ingot furnace, and after the solid silicon is completely melted, heat the crystal at 5-10°C The temperature is gradually reduced to room temperature at a rate of 1 / min, so that the liquid silicon is crystallized again to form a polysilicon ingot, crushed to 60 mesh, pickled, washed and then dried to obtain the product polysilicon.

[0025] Wherein, the acid in the pickling operation process is a mixture of hydrofluoric acid with a mass fraction of 2% and hydrochloric acid with a mass fraction of 5%, and the mass fraction of hydrofluoric acid with 2% and hydrochloric acid with a mass fraction of 5% The volume ratio is 1:1.8.

[0026] Wherein, the pickling operation is to atomize the acid and then spray it on the polysilicon to be treated.

[0027] Wherein, the d...

Embodiment 3

[0030] A polysilicon crystallization process, comprising: when the silicon material in the ingot furnace is in the state of coexistence of solid silicon and liquid silicon, maintaining the temperature at the top of the ingot furnace, and after the solid silicon is completely melted, heat the crystal at 5-10°C The temperature is gradually reduced to room temperature at a rate of 1 / min, so that the liquid silicon is crystallized again to form a polysilicon ingot, crushed to 60 mesh, pickled, washed and then dried to obtain the product polysilicon.

[0031] Wherein, the acid in the pickling operation process is a mixture of hydrofluoric acid with a mass fraction of 2% and hydrochloric acid with a mass fraction of 5%, and the mass fraction of hydrofluoric acid with 2% and hydrochloric acid with a mass fraction of 5% The volume ratio is 1:2.4.

[0032] Wherein, the pickling operation is to atomize the acid and then spray it on the polysilicon to be treated.

[0033] Wherein, the d...

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Abstract

The invention relates to the technical field of polycrystalline silicon, and particularly discloses a polycrystalline silicon crystallization process which comprises the following steps: when a silicon mixture in an ingot furnace is in a state of coexistence of solid silicon and liquid silicon, maintaining the temperature of the inner top of the ingot furnace, after the solid silicon is completely molten, gradually reducing the temperature to room temperature at a speed of 5 to 10 DEG C per minute to recrystallize the liquid silicon to form a polycrystalline silicon ingot, crushing the polycrystalline silicon ingot into 60 meshes, and performing acid washing, cleaning and drying to obtain a polycrystalline silicon product. According to the crystallization process, crystallization treatment is performed ono the liquid silicon when the silicon mixture is in a solid-liquid mixture state, so that the temperature of the liquid silicon in each ingot furnace can keep basically consistent, the latent heat in the liquid silicon keeps consistent, the crystallization speed of the liquid silicon is stabilized, and the crystallization stability of the liquid silicon is improved. In addition, the polycrystalline silicon crystallization process has the characteristics of simple process and high production efficiency.

Description

technical field [0001] The invention relates to the technical field of polysilicon, in particular to a polysilicon crystallization process. Background technique [0002] With the rapid development of the photovoltaic industry, polysilicon ingot furnaces have been widely used in the photovoltaic power generation industry due to their high production capacity and high product quality stability. [0003] When producing polycrystalline silicon ingots in the prior art, when the silicon material is in the melting stage, it is necessary to wait until the silicon material is completely melted into liquid silicon, and then proceed to the crystallization process step. When the overall temperature of the liquid silicon in the ingot furnace is high and there is more latent heat, the crystallization speed of the polysilicon ingot is slow, and there is a phenomenon of melting again after receiving an alarm. At the same time, due to the inconsistent latent heat contained in liquid silicon...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B28/06
CPCC30B29/06C30B28/06
Inventor 赵建军
Owner ANHUI ELECTRIC GRP SHARES
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