High-temperature corrosion-resistant vacuum synthesizing furnace and process method thereof

Abstract

The invention provides a high-temperature corrosion-resistant vacuum synthesizing furnace and a process method thereof. The high-temperature corrosion-resistant vacuum synthesizing furnace comprise a tubular high-temperature furnace, a glove box and a gas washing device, wherein the tubular high-temperature furnace comprises a furnace body and a furnace tube, an electric heating device is arranged on the inner wall of the furnace body, the furnace tube comprises a transverse furnace tube and a vertical furnace tube, an inlet sealing flange and an inlet cooling sleeve are arranged at the left end of the transverse furnace tube, a reaction boat is arranged in the transverse furnace tube, the vertical furnace tube is provided with an outlet cooling sleeve and an outlet sealing flange, and the lower end of the outlet sealing flange is connected with a collecting bottle in a sealed manner. The high-temperature corrosion-resistant vacuum synthesizing furnace has the advantages that vacuum heating can be effectively performed on reactants, the synthesized products of reaction can be collected conveniently, and reaction conditions can be observed at any time.

Description

technical field [0001] The invention relates to a high-temperature corrosion-resistant vacuum synthesis furnace and a process method thereof. The invention belongs to the field of compound synthesis equipment. Background technique [0002] With the rapid development of flat-panel displays, the demand for ITO film materials for transparent electrodes has increased sharply, and ITO film materials use anhydrous InCl 3 and SnCl 4 It is prepared by dissolving in ethanol after mixing according to a certain proportion, and then adopting spray pyrolysis method. Of which anhydrous InCl 3 As an important material of ITO thin film, its purity has a decisive influence on the performance of ITO thin film. Currently Anhydrous InCl 3 It is mainly synthesized by the direct reaction of hydrogen chloride and indium, but the production of anhydrous InCl 3 Traditional equipment has problems such as small output, high cost, and insufficient purity, and mainly relies on imported equipment f...

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Problems solved by technology

Currently Anhydrous InCl 3 It is mainly synthesized by the direct reaction of hydrogen chloride and indium, but the production of anhydrous InCl 3 Traditional equipment has problems such as small output, high cost, and insufficient purity, and mainly relies on imported equipment for production. On the premise of ensuring output, purity, and safety, the localization of equipment is an important problem that needs to be solved.

[0003] In the invention patent "High-temperature Synthetic Furnace System for Compounds and the Application Method of the System, Publication No. CN103438704A", a synthetic device for producing cadmium telluride is proposed, but the device has no cooling crystallization device, no gas washing device, and the furnace body Unable to open during reaction, unable to observe the reaction, unable to be used for anhydrous InCl 3 production

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