Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Secondary electron measurement device

A technology of secondary electrons and measuring devices, applied in measuring devices, material analysis using wave/particle radiation, instruments, etc., can solve the difficulty of receiving reverse electrons, the difficulty of measuring the degree of neutralization of implanted ions, and the systematic error of measurement and other issues, to achieve the effect of small bombardment damage, realize total current measurement, and avoid surface damage

Active Publication Date: 2017-05-31
CHINA INSTITUTE OF ATOMIC ENERGY
View PDF6 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are two difficulties in the ion implantation method. One is that the implanted ions are easy to cause surface damage, and the surface damage will affect the emission performance of secondary electrons. The other is that it is difficult to measure the neutralization degree of implanted ions, and the equipment is also complicated and expensive.
The use of thin samples will affect the emission performance of secondary electrons
[0007] The second problem is that when the primary electrons generated by the electron gun are injected into the surface of the sample to be tested, holes need to be opened on the secondary electron receiving surface, and the secondary electrons emitted from the surface of the material always have a direction opposite to that of the primary electrons. Reverse electrons are difficult to be received by the receiving electrode, and may even re-bombard the surface of the material under the action of the electric field, which may cause systematic errors in measurement

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Secondary electron measurement device
  • Secondary electron measurement device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Such as figure 1 The secondary electron measurement device shown is composed of a vacuum chamber 1, a receiving electrode 2, a grid 3, a plasma torch 4, a plasma excitation electrode 5, a sample to be tested 6, a sample carrier 7, an electron gun 8, and an electron deflection transmission system 9 And other systems such as vacuum, power supply, and measurement.

[0028] The sample carrying bracket 7 is set in the vacuum chamber 1, the sample 6 to be tested is set on the sample carrying bracket 7, and the primary electrons are emitted by the electron gun 8 into the vacuum chamber 1 and bombard the sample 6 to be tested, which can be loaded with high-pressure plasma The excitation electrode 5 and the plasma torch 4 can be set separately or at the same time. After completing the secondary electron measurement of one or several electron pulses of the sample 6 to be tested, close the vacuum pump valve of the electron gun and the vacuum chamber, and pass the The plasma gener...

Embodiment 2

[0036] figure 2 Shown is the secondary electron current angular distribution measurement bracket diagram. When measuring the angular distribution of the secondary electron current, the figure 1 The receiving electrode 2, the grid 3 and the electron deflection transmission system 9 in the measuring device are removed, the electron gun can directly shoot into the sample to be tested, and the sample carrying bracket 7 is changed to figure 2 Structure.

[0037] figure 2 Among them, the Y-axis turret 10 can independently rotate along the Y-axis parallel to the surface of the sample to be measured relative to the sample-carrying bracket 7; X-axis rotation; the sample carrying bracket 7 , the Y-axis turntable 10 and the X-axis turntable 11 can rotate together along the Z-axis parallel to the surface of the sample to be measured and perpendicular to the Y-axis. On the inside of the Y-axis turret 10 and the X-axis turret 11 relative to the sample, a mutually insulated secondary ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to an electron measurement technology and particularly relates to a secondary electron measurement device. According to the device, a plasma generation device is arranged in a vacuum cavity, charges accumulated on the surface of an insulated sample during secondary electron measurement are neutralized by plasma, and total current measurement and angle distribution measurement of secondary electrons can be realized; secondary electrons of a reverse-shooting electronic gun can be collected. The problem of surface damage of the insulated sample with a positive ion implantation and neutralization method in the prior art is solved.

Description

technical field [0001] The invention belongs to electronic measurement technology, in particular to a secondary electronic measurement device. Background technique [0002] Secondary electrons refer to electrons with certain kinetic energy that bombard the surface of some materials and emit electrons from the surface of the material. The energy of secondary electrons is very low, generally no more than 50eV, and the conditions for its generation are generally vacuum. [0003] For different application environments, the impact of secondary electrons has its own advantages and disadvantages. In high-power waveguides, the emission of secondary electrons can easily lead to radio frequency ignition, making the microwave transmission system unstable. In the radio frequency resonant cavity, especially in the superconducting resonant cavity, the secondary electrons are easy to cause avalanche effect and spark, which will also make the resonant cavity unable to work stably. Theref...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N23/225
CPCG01N23/225
Inventor 李金海
Owner CHINA INSTITUTE OF ATOMIC ENERGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com